Multi-Channel Anti-Fuse Structure for Breakdown Performance
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Solution Overview
Problem
In integration circuit fabrication, single-channel anti-fuse structures have reduced breakdown performance, leading to increased manufacturing costs and area consumption due to the need for multiple structures to be connected, while existing solutions fail to efficiently address the issue of faulty electronic components without abandoning entire wafers.
Innovation Solution
A multi-channel anti-fuse structure with a longer overlapping perimeter between the gate electrode and the active area, formed by a gate electrode with multiple overlapping portions and a dielectric layer, enhances breakdown performance and reduces chip area occupancy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single-channel anti-fuse structure is used, then the device complexity is reduced, but the breakdown performance deteriorates
Solution Approach 1:
The gate electrode is divided into multiple segments (first portion and multiple second portions) that are spatially separated. Each second portion forms an independent channel with the active area, creating a multi-channel structure. This segmentation allows the anti-fuse device to achieve improved breakdown performance through multiple parallel breakdown paths while maintaining a relatively simple overall structure.
2Reliability
If multiple single-channel anti-fuse structures are connected to enhance breakdown performance, then the reliability is improved, but the chip area occupancy increases
Solution Approach 1:
Multiple channels are merged into a single integrated anti-fuse structure. The gate electrode combines a first portion and multiple second portions that collectively form multiple channels with the active area. This merging approach achieves the breakdown performance of multiple structures while occupying less chip area than disconnected separate structures would require.
Solution Approach 2:
The patent utilizes vertical stacking and spatial arrangement in the vertical projection direction to create multiple channels. By arranging the second portions of the gate electrode at different positions that overlap with the active area in the vertical projection direction, the structure achieves multi-channel functionality without proportionally increasing the horizontal chip area occupancy.
3Manufacturing precision
If the gate electrode edge is separate from the active area, then the manufacturing precision is improved, but the overlapping perimeter is reduced
Solution Approach 1:
The gate electrode is segmented into a first portion and multiple second portions. The second portions are positioned to overlap with the active area, creating the necessary overlapping perimeter for channel formation. This segmentation allows the critical overlapping regions to be precisely formed while the first portion can be positioned separately, improving overall manufacturing precision.
Data Source
AI summary
An anti-fuse structure includes an active area, a gate electrode over the active area, and a dielectric layer between the active area and the gate electrode. The active area and the gate electrode partially overlap in a vertical projection direction, forming a plurality of channels. One of the gate electrode and the active area includes a plurality of extending portions to form the plurality of channels.