Multi-Channel Nanostructure Gate Layout for Dense FinFET Integration
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Solution Overview
Problem
As semiconductor devices continue to shrink in feature size, challenges arise in integrating more components into a given area, requiring innovative methods for forming multi-channel devices and isolation regions to maintain performance and efficiency.
Innovation Solution
The process involves forming a multi-layered stack of semiconductor materials in a substrate with alternating layers of different lattice constants, followed by the creation of trenches and fins to form active components like FinFET transistors, using techniques such as chemical vapor deposition and reactive ion etching, and subsequent deposition and removal of dielectric and sacrificial layers to define isolation regions and gate structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but manufacturing precision and device performance deteriorate
Solution Approach 1:
The patent divides the semiconductor structure into multiple channels within a single device footprint, creating multi-channel transistors that share common components (gate, source, drain) while maintaining separate conduction paths. This segmentation approach increases functional density without proportionally reducing feature dimensions, thereby improving integration density while maintaining manufacturability
Solution Approach 2:
The patent transitions from planar two-dimensional channel structures to three-dimensional multi-channel architectures, where multiple channels are stacked vertically or arranged in spatial configurations. This dimensional change allows more channels to be packed into the same footprint area, increasing integration density without requiring proportional reduction in minimum feature size
2Productivity
If multi-channel devices are formed to increase integration density, then more components fit in given area, but device complexity increases
Solution Approach 1:
The patent merges multiple channels into a single integrated device structure where channels share common source and drain regions, as well as a common gate electrode. This merging approach reduces the number of discrete components and interconnections required, thereby increasing integration density while limiting the growth of device complexity
Solution Approach 2:
The patent creates multi-channel devices where a single gate electrode controls multiple channels, and shared source/drain regions serve multiple conduction paths. This multi-functionality allows one structural element to perform multiple functions (controlling multiple channels, providing electrical connections), increasing integration density without proportionally increasing device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of efficient multi-channel devices with controlled gate structures, reducing leakage currents and optimizing operating voltages, thus enhancing device performance and integration density.
Implementation Method 1
forming a multi-layered stack of semiconductor materials in a substrate with alternating layers of different lattice constants, followed by the creation of trenches and fins to form active components like FinFET transistors, using techniques such as chemical vapor deposition
Implementation Method 2
using techniques such as chemical vapor deposition and reactive ion etching
Data Source
AI summary
The disclosure is directed towards semiconductor devices and methods of manufacturing the semiconductor devices. The methods include forming fins in a device region and forming other fins in a multilayer stack of semiconductor materials in a multi-channel device region. A topmost nanostructure may be exposed in the multi-channel device region by removing a sacrificial layer from the top of the multilayer stack. Once removed, a stack of nanostructures are formed from the multilayer stack. A native oxide layer is formed to a first thickness over the topmost nanostructure and to a second thickness over the remaining nanostructures of the stack, the first thickness being greater than the second thickness. A gate dielectric is formed over the fins in the device region. A gate electrode is formed over the gate dielectric in the device region and surrounding the native oxide layer in the multi-channel device region.