Multichannel HEMT Plug Structure for Lower ON Resistance
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Solution Overview
Problem
Nitride-based multichannel high electron mobility transistors (HEMTs) require further improvement in ON resistance (RDS(ON)) to enhance their performance in high-power applications.
Innovation Solution
Incorporating electrically conducting plugs that traverse and form ohmic contacts with multiple conductive channels, including 2DEG current channels, to create alternative current routes and reduce ON resistance by coupling disrupted and non-disrupted channels, thereby enhancing the capacity to carry ON current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If nitride-based multichannel HEMTs are used to achieve high breakdown voltage and low leakage current, then device reliability is improved, but ON resistance remains too high for optimal performance
Solution Approach 1:
The device is divided into multiple independent conductive channels (first channel, second channel, third channel) that can operate simultaneously. Each channel is separated by potential barriers, allowing the device to achieve high breakdown voltage while providing multiple parallel current paths to reduce overall ON resistance.
Solution Approach 2:
Multiple conductive channels are merged into a single device structure, combining their current-carrying capabilities. The parallel operation of multiple channels reduces the effective ON resistance while maintaining the high breakdown voltage characteristics of nitride-based materials.
2Object-affected harmful factors
If multiple conductive channels are created to reduce ON resistance, then device complexity increases
Solution Approach 1:
The gate electrode structure serves multiple functions: it controls the potential barriers between channels, modulates the conductive channels, and maintains the structural integrity of the multichannel device. This multi-functionality reduces the need for additional control elements that would increase device complexity.
Solution Approach 2:
The device utilizes changes in electrical parameters (potential barriers, carrier concentration, channel width) to control the operation of multiple channels. By adjusting these parameters through the gate voltage, the device can dynamically optimize performance without requiring complex physical reconfiguration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of plugs in multichannel HEMTs significantly reduces the ON resistance and increases the maximum drain current, improving the overall performance and efficiency of the transistors.
Implementation Method 1
electrically conducting plugs that traverse and form ohmic contacts with multiple conductive channels
Implementation Method 2
The accumulated electrons form a relatively thin, sheet-like concentration of high mobility electrons characterized by a high saturation drift velocity, which is referred to as two dimensional electron gas (2DEG)
Implementation Method 3
Voltage relative to a common ground applied to the gate generates an electric field in the FET that controls the resistance of the channel to turn the transistor ON and OFF
Data Source
AI summary
A field effect transistor (FET) includes a plurality of substantially parallel conductive channels and at least one electrically conducting plug to travers and form an ohmic connection with at least two of the plurality of conductive channels.