Multi-Channel III-V Semiconductor Device for High-Frequency Power Gain
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Solution Overview
Problem
Existing semiconductor devices, particularly Gallium nitride on silicon (GaN-on-Si) based devices, are inadequate for high-voltage applications and fail to provide satisfactory performance in terms of power gain at high frequencies.
Innovation Solution
A semiconductor device structure is developed with multiple III-V compound layers, forming multiple carrier channels between these layers, and a gate structure with source and drain regions, enhancing electron mobility and power gain capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If existing GaN-on-Si device structure is used, then manufacturing simplicity is maintained, but power gain at high frequencies is insufficient
Solution Approach 1:
The patent transitions from a conventional planar device structure to a vertical heterostructure with multiple III-V compound layers stacked in the vertical dimension. This creates multiple carrier channels at different depths, enabling enhanced power gain at high frequencies by utilizing the vertical stacking dimension to multiply active regions without proportionally increasing lateral footprint.
Solution Approach 2:
The patent employs composite material structure by stacking multiple III-V compound layers (such as AlGaN/GaN heterostructures) with different band gaps and material properties. Each layer contributes specific characteristics, and their combination creates multiple carrier channels that collectively improve high-frequency power gain while managing the trade-off with structural complexity.
2Power
If single carrier channel structure is used, then device simplicity is maintained, but electron mobility and power gain are limited
Solution Approach 1:
The patent segments the active region into multiple discrete carrier channels by creating separate AlGaN/GaN heterostructure interfaces at different vertical positions. Each interface forms an independent two-dimensional electron gas (2DEG) channel, allowing electrons to travel through multiple segmented pathways, thereby increasing overall electron mobility and power gain capability.
Solution Approach 2:
The patent adds the vertical dimension to carrier transport by stacking multiple heterostructure interfaces vertically. This creates a multi-layered carrier channel system where electrons can move through multiple channels in the vertical direction, effectively increasing electron mobility and power gain without simply expanding the lateral device area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves improved high-frequency power gain and performance by creating multiple carrier channels through heterojunctions and piezo-electric effects, addressing the limitations of existing semiconductor devices.
Implementation Method 1
creating multiple carrier channels through heterojunctions and piezo-electric effects
Data Source
AI summary
The embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a first III-V compound layer disposed over a substrate and a second III-V compound layer disposed over the first III-V compound layer, wherein a first carrier channel is formed in the interface between the first III-V compound layer and the second III-V compound layer. The semiconductor device also includes a third III-V compound layer disposed over the second III-V compound layer and a fourth III-V compound layer disposed over the third III-V compound layer, wherein a second carrier channel is formed in an interface between the third III-V compound layer and the fourth III-V compound layer. The semiconductor device includes a gate structure and S/D regions disposed on two opposite sides of the gate structure, wherein the first carrier channel and the second carrier channel are extended between the S/D regions.