Multi-Channel Semiconductor Layout for Short-Channel Suppression
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Solution Overview
Problem
Current semiconductor devices face challenges in increasing integration density and effectively suppressing the short channel effect in multi-channel transistors, which limits their scalability and current control capabilities.
Innovation Solution
A semiconductor device design that includes a substrate with active patterns and gate electrodes arranged in specific horizontal directions, featuring through vias and active cuts to improve integration density, and a lower wiring layer positioned below the substrate, connected to these vias, allowing for enhanced current control without increasing gate length.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multi-channel transistors are formed with three-dimensional channel structures, then integration density is improved, but device complexity increases
Solution Approach 1:
The device is segmented into multiple independent active patterns (first, second, third active patterns) with separate gate electrodes, allowing each to function as an independent channel. This segmentation enables parallel operation and increases integration density while maintaining manageable complexity through modular design
Solution Approach 2:
The patent transitions from planar two-dimensional channel structures to three-dimensional vertical channel structures by forming active patterns that extend in the vertical direction and gate electrodes that wrap around them. This dimensional change increases the effective channel area and integration density without proportionally increasing device footprint
2Reliability
If gate length is increased to improve current control capability, then current control capability is improved, but device area increases
Solution Approach 1:
The gate electrodes are designed to extend in both horizontal and vertical directions, creating a three-dimensional gate structure that wraps around the active patterns. This allows the gate to control current flow through multiple channels simultaneously, improving current control capability without increasing the horizontal gate length and thus maintaining compact device area
3Reliability
If multi-channel transistor structure is implemented, then short channel effect suppression is improved, but manufacturing precision requirements increase
Solution Approach 1:
Multiple active patterns are spaced apart from one another in the vertical direction, creating physically separated channels. This segmentation isolates each channel's electric field, preventing interaction between adjacent channels and effectively suppressing short channel effects such as drain-induced barrier lowering and hot carrier effects
Solution Approach 2:
Gate electrodes are positioned to extend over specific active patterns with precise spatial relationships defined (e.g., first gate electrode on first active pattern, second gate electrode on fourth active pattern). This localized gate control allows optimization of each channel's electrical characteristics while maintaining overall device performance
Data Source
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AI summary
A semiconductor device is provided. The semiconductor device includes first through third active patterns (F1, F2, F3) extending in and spaced apart from each other along a first direction (DR1) on a first surface of a substrate (100); a first gate electrode (G1) extending in a second direction (DR2) on the first active pattern; a first active cut (FC1) between the first and second active patterns, wherein the first active cut extends in the second direction, and the first active cut is spaced apart from the first gate electrode in the first direction; a second active cut (FC2) between the second and third active patterns, wherein the second active cut extends in the second direction, and the second active cut is spaced apart from the first active cut in the first direction; and a first through via (160) extending vertically through the second active pattern between the first and second active cuts, and into the substrate.