Multi-Channel Wafer Inspection for Multi-Scale Defect Imaging
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Solution Overview
Problem
Existing semiconductor inspection systems face challenges in efficiently detecting and characterizing crystalline material features at multiple length scales, such as micron-scale and sub-micron-scale features, due to system complexity and limited imaging modalities, which can lead to high costs and reduced sampling efficiency.
Innovation Solution
A multi-channel inspection system incorporating birefringent contrast and photoluminescence imaging, with independent control of each channel, allows for precise and accurate imaging of semiconductor workpieces, enabling detection of defects and features across various scales.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a single-channel inspection system is used, then the device complexity is reduced, but the measurement precision and detection capability for multiple length scales deteriorates
Solution Approach 1:
The inspection system is divided into multiple independent imaging channels, each optimized for specific length scales. The first channel detects micron-scale features while the second channel detects sub-micron scale features, allowing each channel to specialize in particular measurement ranges rather than requiring a single complex system to handle all scales
Solution Approach 2:
The multi-channel inspection system provides universal detection capability across multiple length scales (micron-scale and sub-micron scale) within a single integrated platform. Each channel can be independently configured and operated, making the system adaptable to various inspection requirements while maintaining a unified structural framework
2Measurement precision
If multiple imaging channels are used, then the measurement precision and detection capability improve, but the device complexity increases
Solution Approach 1:
The imaging parameters of each channel are independently adjustable, allowing dynamic optimization of each channel for its specific detection range. The controller enables independent adjustment of exposure time, gain, and other parameters for the first and second imaging channels, allowing the system to adapt to different inspection scenarios without requiring complete system reconfiguration
Solution Approach 2:
By segmenting the inspection system into separate imaging channels with dedicated detectors and processing paths, each channel can be optimized for specific resolution requirements without compromising the performance of other channels. The first channel targets micron-scale resolution while the second channel targets sub-micron scale resolution independently
3Productivity
If conventional inspection methods are used, then the system cost is reduced, but the productivity and sampling efficiency deteriorate
Solution Approach 1:
The multi-channel inspection system enables continuous inspection of semiconductor workpieces by simultaneously capturing images across multiple length scales. Both imaging channels can operate concurrently to inspect different features on the same workpiece without requiring sequential scanning or repositioning, thereby increasing sampling efficiency and throughput
Solution Approach 2:
The system provides universal inspection capability that can detect various defect types (cracks, voids, inclusions) at multiple length scales using a single inspection platform, eliminating the need for multiple separate inspection devices and reducing overall system complexity despite the enhanced functionality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system enhances defect detection and characterization capabilities, reducing costs by allowing non-destructive inspection of semiconductor wafers and increasing sampling efficiency, while improving imaging resolution and contrast.
Implementation Method 1
a photoluminescence imaging device configured to image a semiconductor workpiece by directing ultraviolet light at the semiconductor workpiece and detecting photoluminescence emitted from the semiconductor workpiece
Implementation Method 2
a birefringent contrast imaging device configured to image the semiconductor workpiece by directing polarized light at the semiconductor workpiece and detecting a light signal transmitted through the semiconductor workpiece
Data Source
AI summary
Described herein are systems and methods relating to inspecting semiconductor workpieces. In one example, the inspection system includes a first channel having a first imaging device configured to image the semiconductor workpiece on the workpiece using a first radiation source. The inspection system includes a second channel having a second imaging device configured to image the semiconductor workpiece on the workpiece holder using a second radiation source.