Multi-Chip Package Bridge Layout for Dense Die-to-Die Interconnects
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Solution Overview
Problem
The microelectronics industry faces challenges in achieving high die-to-die interconnect densities in multi-chip packages, which limits bandwidth and increases costs due to the need for extensive through-silicon vias and large silicon interposers, making it difficult to fabricate interconnects within organic substrates effectively.
Innovation Solution
The use of silicon bridges or other material bridges embedded in or attached to the package substrate, eliminating the need for through-silicon vias and enabling high-density interconnects by leveraging advanced silicon process technology, allowing for precise alignment and supporting dense die-to-die connections without the infrastructure required for TSVs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If through-silicon vias and large silicon interposers are used to achieve high die-to-die interconnect densities, then interconnect density is improved, but manufacturing complexity and cost increase significantly
Solution Approach 1:
The patent extracts the interconnect function from the substrate and implements it through separate bridge structures. These bridges are attached to the substrate and provide die-to-die interconnects without requiring through-silicon vias or large interposers, thereby reducing manufacturing complexity while maintaining high interconnect density
Solution Approach 2:
The interconnect structure is segmented into separate bridge components rather than being integrated into the substrate itself. This segmentation allows for independent fabrication and attachment of bridge structures, simplifying the overall manufacturing process while achieving high interconnect densities
2Quantity of substance
If through-silicon vias are used to create die-to-die connections, then interconnect density is improved, but fabrication difficulty increases
Solution Approach 1:
The patent removes the requirement for through-silicon vias by extracting the interconnect function to separate bridge structures. These bridges are attached to the substrate surface and provide the same die-to-die connectivity without the complex TSV fabrication process
Solution Approach 2:
Bridge structures serve as intermediary elements between dies, providing die-to-die interconnects without requiring direct through-silicon via formation. These bridges act as mediators that simplify the fabrication process while maintaining high interconnect density
3Quantity of substance
If large silicon interposers are used to support dense interconnects, then interconnect density is improved, but cost increases
Solution Approach 1:
The patent extracts the interconnect support function from large silicon interposers and implements it through smaller bridge structures attached to the substrate. This approach reduces material costs while achieving the same high interconnect density
Solution Approach 2:
The patent uses smaller, less expensive bridge structures instead of large, costly silicon interposers. These bridges provide the necessary interconnect support at reduced cost, making the overall package more economically viable
Data Source
AI summary
A multi-chip package includes a substrate (110) having a first side (111), an opposing second side (112), and a third side (213) that extends from the first side to the second side, a first die (120) attached to the first side of the substrate and a second die (130) attached to the first side of the substrate, and a bridge (140) adjacent to the third side of the substrate and attached to the first die and to the second die. No portion of the substrate is underneath the bridge. The bridge creates a connection between the first die and the second die. Alternatively, the bridge may be disposed in a cavity (615, 915) in the substrate or between the substrate and a die layer (750). The bridge may constitute an active die and may be attached to the substrate using wirebonds (241, 841, 1141, 1541).