Multi-Chip Module Power Envelopes for Thermal Risk Assessment
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Solution Overview
Problem
Thermal management in multi-chip modules is challenging due to increased power dissipation and complexity, especially in chiplet modules with multiple dies of varying power magnitudes, where traditional thermal simulation methods are computationally intensive and fail to provide clear safety margins.
Innovation Solution
A power envelope analysis method using thermal resistance matrices and risk values to determine safe power magnitudes, allowing for efficient thermal optimization by evaluating power configurations against predefined thermal limits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If full thermal simulation is used to predict junction temperatures for each proposed die power configuration, then thermal reliability assessment is accurate, but computational complexity and time consumption increase significantly
Solution Approach 1:
The patent segments the thermal analysis into two distinct parts: (1) a comprehensive thermal simulation performed once to extract thermal resistance parameters, and (2) rapid power envelope calculations using these pre-extracted parameters. This segmentation allows the computationally intensive simulation to be done only once, while subsequent power envelope assessments use the pre-computed thermal resistance matrix for rapid evaluation.
Solution Approach 2:
The patent performs preliminary thermal simulation to extract thermal resistance parameters before conducting power envelope analysis. By pre-computing the thermal resistance matrix from a single comprehensive simulation, the system prepares all necessary thermal characteristics in advance, enabling rapid subsequent assessments without repeating full thermal simulations.
2Reliability
If traditional thermal simulation methods are used for multi-chip modules with varying power magnitudes, then thermal analysis is comprehensive, but the method fails to provide clear safety margins and becomes unwieldy
Solution Approach 1:
The patent transforms the thermal analysis from temperature-based predictions to power-based envelope definitions. By changing the parameter focus from 'what is the temperature' to 'what is the safe power range', the system provides designers with direct power magnitude guidelines and safety margins, making thermal constraints much easier to apply in design iterations.
Solution Approach 2:
The patent introduces thermal resistance parameters as an intermediary between comprehensive thermal simulation and practical power envelope assessment. These extracted thermal resistance values serve as a bridge, translating complex simulation results into simple, usable power envelope calculations that provide clear safety margins without requiring repeated full simulations.
3Adaptability or versatility
If chiplet modules use multiple dies with different manufacturing nodes, then design flexibility and cost are improved, but thermal management complexity and power dissipation increase
Solution Approach 1:
The patent creates a universal power envelope analysis framework that works for any multi-chip configuration regardless of the number of dies, their power magnitudes, or manufacturing nodes. The thermal resistance matrix approach provides a single unified method that handles heterogeneous chiplet modules with varying power characteristics, eliminating the need for different analysis methods for different configurations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Provides a computationally efficient and intuitive visual method to assess thermal reliability of multi-chip modules, enabling designers to optimize power distributions and ensure safe operating conditions.
Implementation Method 1
the thermal resistance is a characteristic parameter of the package that can be used to predict the junction temperature of the package when the power or the ambient temperature is changed
Data Source
AI summary
A semiconductor device is made by calculating a thermal resistance matrix for the semiconductor device. A plurality of maximum junction temperatures for the plurality of die of the semiconductor device is selected. A plurality of power envelope surfaces are calculated for the semiconductor device based on the thermal resistance matrix and the maximum junction temperatures. A plurality of powers is selected for the plurality of die. The plurality of powers are compared against the plurality of power envelope surfaces to determine a plurality of risk values.