Multi-Color Epitaxial LED Fabrication Without Phosphor Conversion
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Solution Overview
Problem
Existing methods for manufacturing light-emitting devices using phosphor powder or quantum dots face challenges such as short service life, low light conversion efficiency, and cumbersome processes that result in low yield.
Innovation Solution
A manufacturing method for a light-emitting device that involves growing semiconductor epitaxial layers on a substrate with different doping proportions to form light-emitting units of varying colors on both the front and back surfaces, eliminating the need for phosphor powder or quantum dots and simplifying the production process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If phosphor powder or quantum dots are used for wavelength conversion, then light-emitting devices can be manufactured, but the service life is short and light conversion efficiency is low
Solution Approach 1:
The patent extracts and eliminates the wavelength conversion materials (phosphor powder or quantum dots) from the LED structure. By directly growing semiconductor epitaxial layers with different bandgaps on the same substrate, the invention removes the intermediate conversion layer that causes energy loss and reduces service life, achieving direct light emission from the semiconductor material itself
Solution Approach 2:
The patent changes the fundamental parameter of light emission by controlling the bandgap of semiconductor materials through compositional adjustment during epitaxial growth. Instead of using a single material wavelength and converting it, the invention grows InGaAlP layers with different Indium (In) component proportions to directly emit different wavelengths (red, green, yellow light), fundamentally changing how wavelength is controlled
2Adaptability or versatility
If monochromatic LEDs are separately manufactured and then transferred to a driving substrate, then different color LEDs can be produced, but the process is cumbersome and yield is low
Solution Approach 1:
The patent merges multiple monochromatic LED manufacturing processes into a single integrated epitaxial growth process. By growing red, green, and yellow light-emitting InGaAlP semiconductor layers simultaneously on the same GaAs substrate with different In component proportions, the invention combines what would otherwise require separate fabrication and transfer steps, dramatically simplifying the manufacturing process and improving yield
Solution Approach 2:
The GaAs substrate serves multiple functions simultaneously: it acts as the base substrate for growth, provides lattice matching for InGaAlP layers, and enables the integration of multiple light-emitting units with different colors. The single substrate performs what would otherwise require multiple separate substrates and complex transfer operations
3Adaptability or versatility
If separate manufacturing and transfer of monochromatic LEDs is performed, then different colors can be achieved, but production efficiency is low
Solution Approach 1:
The patent combines the manufacturing of multiple color LEDs into a single epitaxial growth step on one substrate. By controlling the In component proportion in InGaAlP layers during growth, the invention produces red, green, and yellow light-emitting units simultaneously, eliminating the need for separate manufacturing and transfer operations that reduce production efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves production efficiency, extends the service life of the light-emitting device, and enhances its reliability by eliminating the need for wavelength conversion materials and simplifying the manufacturing process.
Implementation Method 1
A semiconductor epitaxial layer is grown on the front surface of the substrate based on the first mask layer after patterning process
Data Source
AI summary
A manufacturing method of a light-emitting device includes providing a substrate; forming a first mask layer on the front surface of the substrate and performing patterning process on the first mask layer to form multiple front mask openings in the first mask layer; growing a semiconductor epitaxial layer on the front surface of the substrate based on the first mask layer after patterning process and doping a first element during the growth of the semiconductor epitaxial layer to form multiple first light-emitting units and multiple second light-emitting units where the component proportion of the first element in the first light-emitting units is different from the component proportion of the first element in the second light-emitting units; turning the substrate upside down on a transposition substrate to expose the back surface of the substrate; and forming multiple third light-emitting units on the back surface of the substrate.