Multicolor LED Structure With Controlled Indium Diffusion
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Solution Overview
Problem
Existing optoelectronic devices with light-emitting diodes (LEDs) face challenges in achieving consistent diameters while emitting different wavelengths, leading to parasitic wavelengths and high manufacturing costs for multi-colored LEDs.
Innovation Solution
The optoelectronic device comprises a substrate with first and second light-emitting diodes, each having an elongate three-dimensional shape. The LEDs feature primary, secondary, and tertiary doped semiconductor portions, with the outer lateral portions configured to control the diffusion of indium or gallium species, achieving specific atomic concentrations for precise wavelength emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the composition ratio of indium or gallium in InxGa(1-x)N compound is varied to match wavelengths, then different wavelengths can be emitted, but the amount of indium incorporated varies according to diameter and growth conditions, leading to parasitic wavelengths and high manufacturing costs
Solution Approach 1:
The patent applies preliminary action by forming an outer lateral portion around the light-emitting diode structure before the indium incorporation step. This outer lateral portion serves as a diffusion barrier that pre-controls the indium concentration in the active layer during subsequent growth, ensuring consistent indium incorporation regardless of diameter variations or growth conditions, thereby preventing parasitic wavelengths while maintaining multi-wavelength emission capability
2Adaptability or versatility
If several growth steps are implemented to obtain high emission quality multi-colored light-emitting diodes, then different wavelengths can be achieved, but manufacturing costs increase
Solution Approach 1:
The outer lateral portion is formed in advance as a structural feature that enables subsequent single-step or reduced-step growth processes to achieve precise indium concentration control. This preliminary structural preparation allows multi-color emission to be achieved with fewer growth steps, thereby reducing manufacturing complexity and cost while maintaining high emission quality
Solution Approach 2:
The patent implements local quality by creating an outer lateral portion with specific material composition and structural properties that differ from the bulk material. This localized structure provides tailored diffusion characteristics that enable precise control of indium incorporation in the active region, allowing different wavelengths to be achieved through controlled diffusion rather than multiple complex growth steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for optoelectronic devices with LEDs of the same diameter emitting different wavelengths, reducing manufacturing costs and improving emission quality by accurately controlling indium concentrations.
Implementation Method 1
the first outer lateral portion being configured to enable at least one first atomic species containing indium or gallium to diffuse from the first outer lateral portion to the first secondary active semiconductor portion
Data Source
AI summary
An optoelectronic device includes a substrate, at least one first light-emitting diode and at least one second light-emitting diode, each first light-emitting diode having a first primary doped semiconductor portion, a first secondary active semiconductor portion, and a first tertiary doped semiconductor portion. Each second light-emitting diode includes a second primary doped semiconductor portion, a second secondary active semiconductor portion, and a second tertiary doped semiconductor portion. A first external lateral portion is configured to allow the first atomic species to diffuse until the first secondary active semiconductor portion reaches an atomic concentration of indium between 13% and 20%. A second external lateral portion is configured to allow the first atomic species to diffuse until the second secondary active semiconductor portion reaches an atomic concentration of indium between 20% and 40%.