Multi-Contact MicroLED Structure for High-Speed Optical Links
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Solution Overview
Problem
Lasers are not suitable for short-distance optical communications, such as chip-to-chip communications, due to their narrow linewidth and high threshold current, which limits their modulation speed and efficiency in these applications.
Innovation Solution
The development of a microLED with a p-type layer, n-type layer, and a lightly-doped recombination layer including quantum wells, optimized for high-speed operation through specific doping structures and etched vias, which allows for high modulation speeds and efficient data transfer over short distances without the need for high threshold currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If lasers are used for optical communication, then high speed data transmission is achieved, but high threshold current and narrow linewidth make them unsuitable for short-distance chip-to-chip communication
Solution Approach 1:
The patent modifies the LED structure by introducing a lightly-doped recombination layer with quantum wells between the p-type and n-type layers, changing the doping parameters and layer composition to achieve high-speed modulation without requiring high threshold currents like lasers
Solution Approach 2:
The patent uses LEDs instead of lasers for short-distance optical communication, substituting a simpler, lower-cost device that is optimized for short-range applications where the narrow linewidth and high threshold current of lasers are unnecessary
2Speed
If traditional LED structures are used, then manufacturing is simpler, but modulation speed is insufficient for high-speed data communication
Solution Approach 1:
The LED is divided into multiple functional layers including p-type layer, n-type layer, and a lightly-doped recombination layer with quantum wells, with additional etched vias for multi-contact configuration, segmenting the device to optimize different functions in each region
Solution Approach 2:
The patent introduces etched vias that create vertical contact points through the LED structure, adding a vertical dimension to the electrical contacts and enabling multi-contact configurations that improve carrier injection and modulation speed
3Productivity
If single-contact LED configuration is used, then device structure is simpler, but data communication performance is insufficient
Solution Approach 1:
The LED is segmented into multiple contact regions with separate p-type and n-type contacts, allowing independent electrical control of different parts of the device and enabling improved current distribution for higher data transfer efficiency
Solution Approach 2:
The patent adds vertical contact points through etched vias, transitioning from planar surface contacts to three-dimensional multi-point contacts, which improves electrical connection and carrier injection efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The microLED achieves high modulation speeds and efficient data transfer over short distances with reduced waveguide loss and power consumption, offering superior performance and reliability compared to traditional LEDs and lasers for intra- and inter-chip communications.
Implementation Method 1
a lightly-doped recombination layer, the recombination layer including at least one quantum well between the p type layer and the n type layer
Implementation Method 2
an optical waveguide optically coupling light from the LED to the detector
Implementation Method 3
a detector for performing optical electrical conversion using the light
Data Source
AI summary
An LED may have structures optimized for speed of operation of the LED. The LED may be a microLED. The LED may have a p-doped region with one or more quantum wells instead of an intrinsic region. The LED may have etched vias therethrough.