Multi-Deck Memory Cell Formation via Segmentation
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Solution Overview
Problem
Conventional techniques for forming memory devices with increased storage capacity face challenges in efficiently arranging and operating memory cells across multiple levels, leading to issues with reliable data storage and retrieval.
Innovation Solution
The memory device employs a multi-deck structure with alternating conductor and dielectric materials, where control gates and memory cells are formed in multiple levels, and switches are configured to operate as transistors to maintain channel continuity and facilitate operations like read, write, and erase, using specific voltage biases to differentiate between memory cell and switch configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cell levels are increased to accommodate increased storage capacity, then storage capacity is improved, but manufacturing complexity and reliability challenges increase
Solution Approach 1:
The memory device is divided into multiple decks, where each deck contains a set of memory cells arranged in strings. This segmentation allows independent formation and testing of each deck, reducing overall manufacturing complexity while increasing total storage capacity across all decks
Solution Approach 2:
Memory cells are arranged in three-dimensional stacked configurations with multiple levels within each deck. This vertical arrangement in another dimension increases storage capacity without proportionally increasing planar manufacturing complexity
2Quantity of substance
If memory cell levels are increased to accommodate increased storage capacity, then storage capacity is improved, but operational reliability deteriorates
Solution Approach 1:
By dividing the memory device into multiple independent decks with separate control gates and read/write circuits for each deck, the system can perform independent operations on each deck. This segmentation isolates potential failures and improves overall operational reliability while maintaining high storage capacity
Solution Approach 2:
Switches are introduced as intermediary elements between control gates and memory cell strings. These switches enable selective activation of specific memory cell decks, allowing precise control over which decks are actively read or written, thereby improving reliability by isolating operational stress to specific decks
3Quantity of substance
If multiple decks of memory cells are formed, then storage capacity is improved, but process complexity increases
Solution Approach 1:
Each deck is formed as a separate modular unit with its own control gates, tunneling barriers, and memory cell strings. This modular segmentation allows standardized formation processes to be repeated for each deck, improving ease of manufacture while achieving high storage capacity through stacking
Solution Approach 2:
Tunneling barriers and charge trap layers are pre-formed within each deck structure before final memory cell programming. This preliminary action simplifies the overall manufacturing process by preparing decks in advance with all necessary functional layers in place
Data Source
AI summary
Some embodiments include apparatuses and methods having multiple decks of memory cells and associated control gates. A method includes forming a first deck having alternating conductor materials and dielectric materials and a hole containing materials extending through the conductor materials and the dielectric materials. The methods can also include forming a sacrificial material in an enlarged portion of the hole and forming a second deck of memory cells over the first deck. Additional apparatuses and methods are described.