Multidie Support Structures for Thin Die Warpage Control
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Solution Overview
Problem
Semiconductor packages face challenges in reducing warpage of thinned semiconductor die, which can prevent successful processing and packaging due to bending or warping under various forces, especially when the die size exceeds the thickness, leading to issues in die bonding, encapsulating, and other packaging operations.
Innovation Solution
Implementing a die support structure, either permanent or temporary, made of materials like mold compounds that can be coupled to the planar surfaces and thickness of semiconductor die, reducing warpage to less than 200 microns through techniques such as light exposure, ultrasonic energy, peeling, etching, or grinding, and using multiple layers to stabilize the die during packaging.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the die size exceeds the thickness, then the semiconductor die can be thinned to reduce packaging size, but the die becomes prone to warpage and bending under various forces
Solution Approach 1:
The patent applies parameter changes by modifying the physical state and mechanical properties of the die support structure through material selection and processing conditions. The mold compound is cured at specific temperatures and pressures to achieve optimal mechanical support properties that counteract die warpage while maintaining thin profile
Solution Approach 2:
The patent uses composite materials by combining the semiconductor die with a mold compound that has specific mechanical properties. The mold compound acts as a supporting structure that provides rigidity and prevents warpage, creating a composite system where the combined structure is more stable than the thin die alone
2Stability of the object's composition
If a die support structure is added to reduce warpage, then die stability improves, but the device complexity increases
Solution Approach 1:
The patent merges the die support function with the existing packaging process by integrating the mold compound application and curing steps into the standard encapsulation workflow. The support structure is formed as part of the packaging process rather than as a separate component, reducing overall device complexity
Solution Approach 2:
The mold compound serves multiple functions: it acts as both the die support structure for warpage control and the encapsulating material for environmental protection. This multi-functionality eliminates the need for separate support structures, simplifying the overall device design
3Stability of the object's composition
If multiple layers are used to stabilize the die, then warpage control improves, but the manufacturing process becomes more complex
Solution Approach 1:
The patent applies segmentation by dividing the mold compound into multiple layers with different functions: a first layer provides primary support and warpage control, while a second layer provides additional stabilization and encapsulation. This layered approach allows optimized control of warpage through specific layer configurations
Solution Approach 2:
The patent uses preliminary action by applying and curing the first layer of mold compound before applying the second layer. This sequential approach allows the first layer to establish initial die stabilization, making the subsequent layer application easier and more controlled
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The die support structures effectively reduce warpage to desired levels, enabling successful processing and packaging operations by providing stability and minimizing material deformation under operational forces, thus ensuring the semiconductor die can function as intended.
Implementation Method 1
one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof
Data Source
AI summary
Implementations of a semiconductor device may include a first largest planar surface, a second largest planar surface and a thickness between the first largest planar surface and the second largest planar surface; and one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof. The first largest planar surface, the second largest planar surface, and the thickness may be formed by at least two semiconductor die. The warpage of one of the first largest planar surface or the second largest planar surface may be less than 200 microns.