Multi-Flow Gas Circuit Layout for Uniform Batch Epitaxy
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Solution Overview
Problem
Existing semiconductor processing methods, such as epitaxial deposition, are inefficient, costly, and limited in capacity and throughput, often resulting in non-uniformities that hinder device performance and reduce throughput, especially in batch processing operations.
Innovation Solution
A multi-flow gas circuit and processing chamber design with alternating inject passages and exhaust passages, multiple flow levels, and controlled gas flows to enhance uniformity and efficiency in substrate processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional batch processing operations are used for epitaxial deposition, then processing can be performed, but throughput is reduced and non-uniformities occur
Solution Approach 1:
The gas delivery system is segmented into multiple independent flow channels, each with its own flow controller and valve assembly. These channels are distributed at different flow levels around the substrate, allowing simultaneous processing of multiple substrates with uniform gas distribution to each, thereby increasing throughput while maintaining processing uniformity
Solution Approach 2:
The invention transitions from a single-plane gas distribution system to a multi-level three-dimensional gas distribution architecture. Gas inject passages are arranged at multiple vertical flow levels, creating a multi-dimensional gas flow pattern that improves uniformity across substrates processed simultaneously while increasing overall throughput
2Productivity
If traditional gas circuit designs are used, then processing can be performed, but capacity and throughput are limited
Solution Approach 1:
The gas circuit is divided into multiple independent flow paths, each with dedicated flow controllers and valve assemblies. This segmentation allows each channel to be optimized independently while collectively increasing the system's processing capacity without creating insurmountable complexity
Solution Approach 2:
The multi-flow gas circuit design serves multiple functions simultaneously: it increases processing capacity by handling multiple substrates, maintains uniform gas distribution across all substrates, and provides independent control for different process conditions. This multi-functionality justifies the increased structural complexity by delivering multiple benefits from a single system architecture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves processing uniformity and throughput, reducing operational costs and enhancing the capacity for forming complex structures on substrates.
Implementation Method 1
The material may be deposited in a lateral flow chamber by flowing a process gas parallel to the surface of a substrate positioned on a support, and thermally decomposing the process gas to deposit a material from the gas onto the substrate surface
Implementation Method 2
thermally decomposing the process gas to deposit a material from the gas onto the substrate surface
Data Source
AI summary
Embodiments of the present disclosure relate to multi-flow gas circuits, processing chambers, and related apparatus and methods applicable for semiconductor manufacturing. In one or more embodiments, a processing chamber includes a chamber body, one or more heat sources, and a gas circuit in fluid communication with the chamber body. The gas circuit includes a first flow controller and a first set of valves in fluid communication with the first flow controller. The first set of valves are in fluid communication with a first set of inject passages. The gas circuit includes a second flow controller and a second set of valves in fluid communication with the second flow controller. The second set of valves is in fluid communication with a second set of inject passages. The second set of inject passages and the first set of inject passages alternate with respect to each other along the plurality of flow levels.