Multi-Gate Active Pattern Layout for Lower Parasitic Capacitance
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Solution Overview
Problem
Current semiconductor devices face challenges in scaling and reducing short channel effects while maintaining current control and suppressing parasitic capacitances, particularly in multi-gate transistors with complex active patterns and gate electrode arrangements.
Innovation Solution
The semiconductor device incorporates a specific arrangement of active patterns and gate electrodes, where the width of the first active pattern in the second direction is greater than the second active pattern, and the third active pattern's width is greater than the fourth active pattern, with strategically placed element separation structures and gate electrodes to optimize electrical characteristics and reduce parasitic capacitances.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multi-gate transistors with uniform active patterns are used for scaling, then current control capability is improved, but parasitic capacitances increase and electrical characteristics deteriorate
Solution Approach 1:
The patent applies local quality by creating different active pattern widths at different locations. Specifically, the first active pattern has a first width while the second active pattern has a second width that is smaller than the first width. This local variation optimizes electrical characteristics in different regions while managing parasitic capacitances, rather than using uniform dimensions throughout the device.
Solution Approach 2:
The patent implements asymmetry by deliberately designing the first active pattern with a larger width than the second active pattern. This asymmetric configuration breaks the symmetry of conventional multi-gate transistors, allowing differential control of electrical characteristics and parasitic capacitances across the device structure.
2Reliability
If gate electrode length is increased to improve current control, then current control capability is improved, but device area increases
Solution Approach 1:
The patent transitions from controlling current primarily through gate length (one dimension) to utilizing gate width variations (another dimension). By varying the width of active patterns covered by different gate electrodes, the patent achieves current control capability enhancement without necessarily increasing gate length, thus avoiding proportional increases in device area.
3Reliability
If uniform active pattern widths are used, then manufacturing simplicity is maintained, but electrical characteristics become non-uniform due to short channel effects
Solution Approach 1:
The patent addresses electrical characteristics uniformity by applying local quality principles. The first active pattern and second active pattern have different widths tailored to their specific locations and functional requirements. This localized optimization compensates for short channel effects and achieves more uniform electrical characteristics across the device, while the complexity remains manageable through a relatively simple two-pattern configuration.
Data Source
AI summary
A semiconductor device includes a first element separation structure, a second element separation structure, and a third element separation structure sequentially disposed along a first direction and extending in a second direction intersecting the first direction; a first active pattern extending in the first direction between the first element separation structure and the second element separation structure; a second active pattern extending in the first direction between the second element separation structure and the third element separation structure and separated from the first active pattern by the second element separation structure; a first gate electrode extending in the second direction on the first active pattern; and a plurality of second gate electrodes extending in the second direction on the second active pattern, wherein a width of the first active pattern in the second direction is greater than a width of the second active pattern in the second direction.