Multi-Gate Transistor Contact Structure for Short-Channel Control
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Solution Overview
Problem
Current multi-gate transistors face challenges in achieving optimal performance and reliability due to complexities in gate and source/drain contact structures, which affect the scalability and short channel effects.
Innovation Solution
The semiconductor device incorporates a gate structure with a gate spacer and electrode, where the height of the gate electrode is equal to the height of the source/drain contact and gate spacer relative to the active pattern, and includes a method for fabricating this structure by forming pre-source/drain contacts, removing parts to create lower and upper contacts, and using a mask pattern to define the gate and source/drain contacts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the gate electrode height is increased to improve current control capability, then the short channel effect suppression is improved, but the manufacturing complexity and alignment difficulty increase
Solution Approach 1:
The patent sets the upper surface of the gate electrode at the same height as the upper surface of the source/drain contact, creating an equipotential surface that simplifies the interlayer insulator formation and reduces alignment complexity while maintaining effective gate control over the channel region
2Manufacturing precision
If the gate electrode height is made equal to the source/drain contact height to simplify manufacturing, then the manufacturing precision is improved, but the current control capability may be compromised
Solution Approach 1:
The patent extends the gate electrode laterally beyond the channel region to overlap with the source/drain contact region, compensating for the reduced vertical height advantage through increased horizontal coverage, thereby maintaining current control capability while achieving simplified height alignment
3Reliability
If multi-layer source/drain contact structures are used to improve reliability, then the contact resistance is reduced, but the device complexity and fabrication steps increase
Solution Approach 1:
The patent combines the gate electrode and source/drain contact into a single continuous conductive structure, eliminating the need for separate contact fabrication steps and reducing overall device complexity while maintaining reliable electrical connections through the unified structure
Data Source
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AI summary
The semiconductor device including an active pattern on a substrate and extending in a first direction, a gate structure on the active pattern, including a gate electrode extending in a second direction different from the first direction, a source/drain pattern on at least one side of the gate structure, and a source/drain contact on the source/drain pattern and connected to the source/drain pattern, , wherein with respect to an upper surface of the active pattern, a height of an upper surface of the gate electrode is same as a height of an upper surface of the source/drain contact, and the source/drain contact comprises a lower source/drain contact and an upper source/drain contact on the lower source/drain contact, may be provided.