Multi-Gate Semiconductor Structure With Dielectric Wall Isolation
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Solution Overview
Problem
The integration of multi-gate devices in semiconductor manufacturing is challenging due to increased complexity and the need for improved gate control and reduced short-channel effects, which current fabrication methods struggle to address effectively.
Innovation Solution
A semiconductor structure is formed with first and second nanostructures on a substrate, protected by a protective layer, and a gate structure with reduced gate electrode area through the use of a dielectric wall, enhancing uniformity and reducing unwanted capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multi-gate devices are integrated to improve gate control and reduce short-channel effects, then device performance is improved, but fabrication complexity increases
Solution Approach 1:
The gate structure is segmented into multiple gates (first gate structure and second gate structure) positioned on opposite sidewalls of the channel, creating a multi-gate configuration that improves gate control. The segmentation of the gate into discrete structures on opposite sides allows for better electrostatic control of the channel while maintaining manageable fabrication processes through sequential formation steps.
Solution Approach 2:
Dielectric walls are introduced at specific locations between the source/drain regions to provide localized electrical isolation. This local quality enhancement allows for improved gate control in specific regions without requiring complex global fabrication changes, enabling selective isolation where needed while maintaining simplicity in other areas.
2Object-generated harmful factors
If gate electrode area is reduced to lower capacitance, then short-channel effects are reduced, but gate control may be compromised
Solution Approach 1:
The gate structure transitions from a planar configuration to a three-dimensional configuration with gates positioned on opposite sidewalls of the channel. This dimensional change allows the gate to wrap around the channel in multiple directions, providing enhanced gate control with reduced gate electrode area. The vertical and lateral positioning of gates in three-dimensional space enables better electrostatic control while minimizing capacitive coupling.
Solution Approach 2:
Dielectric walls are introduced as intermediary structures between the source/drain regions to provide electrical isolation. These dielectric walls act as mediators that reduce unwanted capacitance and electrical interference between adjacent structures, thereby reducing short-channel effects while maintaining effective gate control through the multi-gate configuration.
3Reliability
If nanostructure thickness uniformity is maintained to improve performance, then device consistency is improved, but manufacturing precision requirements increase
Solution Approach 1:
The formation of the multi-gate structure and dielectric walls is combined with the channel formation process in an integrated fabrication sequence. By merging the gate structure formation, dielectric wall deposition, and channel definition into a coordinated process flow, the nanostructure thickness is maintained uniformly throughout the structure without requiring separate high-precision steps, thereby improving device consistency while managing manufacturing precision requirements.
Data Source
AI summary
Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures over a substrate, and a plurality of second nanostructures adjacent to the first nanostructures. The semiconductor structure includes a protective layer over the first nanostructures, and a first gate structure formed on the first nanostructures. The semiconductor structure includes a second gate structure formed on the second nanostructures. The semiconductor structure includes a first dielectric wall between the first gate structure and the second gate structure, and a top surface of the first dielectric wall is higher than a top surface of the protective layer.