Multi-Gate Fin Transistor Short Channel Effect Suppression
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Solution Overview
Problem
Multi-gate transistors suffer from a short channel effect (SCE) due to the drain voltage affecting the electric potential in the channel region, limiting their control capability and scalability.
Innovation Solution
The semiconductor device employs first and second fins protruding from a substrate with a field insulating layer and an etch-stop layer pattern to prevent short circuits, allowing for epitaxial growth of source/drain regions, which helps in suppressing the short channel effect and improving operating characteristics without increasing gate length.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multi-gate transistors are used to increase device density, then scaling capability is improved, but short channel effect worsens due to drain voltage affecting channel electric potential
Solution Approach 1:
The transistor channel is segmented into multiple gates (tri-gate or tetra-gate structures) that wrap around the channel from three or four sides. This segmentation allows each gate to independently control the channel electric potential, providing superior electrostatic control compared to conventional single-gate structures and effectively suppressing short channel effect while maintaining high device density
Solution Approach 2:
The gate structure transitions from a planar two-dimensional configuration to a three-dimensional wrap-around configuration. The gate extends vertically and laterally to surround the channel, creating a multi-dimensional control structure that enhances electrostatic control over the channel region and mitigates drain voltage influence
2Reliability
If field insulating layer is formed to fill trench between fins, then short circuit prevention is improved, but manufacturing complexity worsens due to additional etching steps
Solution Approach 1:
The field insulating layer is formed in the trench between fins before the fin formation process. By preparing the insulating layer in advance and using it as an etch stop layer during subsequent fin etching, the patent eliminates the need for separate field insulating layer formation steps after fin fabrication, thereby reducing overall manufacturing complexity while ensuring reliable short circuit prevention
Solution Approach 2:
The field insulating layer serves multiple functions simultaneously: it acts as an electrical insulator to prevent short circuits between adjacent fins, serves as an etch stop layer to control fin etching depth, and provides a foundation for subsequent device structure formation. This multi-functionality reduces the total number of process steps required
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses the short channel effect, enhancing the control capability of multi-gate transistors and improving their operating characteristics by preventing short circuits and optimizing the growth of source/drain regions.
Implementation Method 1
a field insulating layer and an etch-stop layer pattern to prevent short circuits
Implementation Method 2
epitaxially growing source/drain regions
Data Source
AI summary
Semiconductor devices may include first and second fins that protrude from a substrate, extend in a first direction, and are separated from each other in the first direction. Semiconductor devices may also include a field insulating layer that is disposed between the first and second fins to extend in a second direction intersecting the first direction, an etch-stop layer pattern that is formed on the field insulating layer and a dummy gate structure that is formed on the etch-stop layer pattern.