Multigate FinFET Temperature Compensation via Dual-Gate Segmentation
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Solution Overview
Problem
Electronic devices with transistors face challenges in maintaining consistent operating characteristics due to temperature variations across different regions of an integrated circuit, complicating design and performance.
Innovation Solution
A temperature bias controller system utilizing multigate FinFET transistors with separate gate electrodes, where one gate receives a bias signal from a temperature sensor to compensate for temperature changes, ensuring consistent operation across different regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If traditional single-gate transistors are used, then device simplicity is maintained, but temperature compensation precision is insufficient
Solution Approach 1:
The transistor gate is segmented into two independent gates (first gate and second gate), allowing separate control of threshold voltage and functional operation. The first gate receives temperature compensation signals while the second gate handles functional control, enabling precise temperature compensation without compromising device simplicity.
Solution Approach 2:
The multigate FinFET transistor structure serves multiple functions: the first gate provides temperature compensation control while the second gate manages functional operation. This multi-functionality allows a single transistor structure to handle both temperature stabilization and circuit functionality, improving compensation precision without significantly increasing overall device complexity.
2Stability of the object's composition
If temperature compensation is implemented across the integrated circuit, then operating characteristic consistency is improved, but design complexity increases
Solution Approach 1:
Temperature compensation is applied locally at each transistor level through the multigate structure, with the first gate receiving localized temperature compensation signals. This local quality approach ensures that each transistor maintains consistent operating characteristics according to its specific temperature conditions, improving overall circuit consistency without requiring complex global compensation designs.
Solution Approach 2:
The temperature compensation mechanism uses feedback from temperature sensors to dynamically adjust the first gate voltage based on detected temperature changes. This feedback loop continuously monitors and corrects temperature variations, maintaining operating characteristic consistency while using straightforward control logic that does not significantly increase design complexity.
3Temperature
If separate temperature control for different regions is implemented, then regional temperature uniformity is improved, but control system complexity increases
Solution Approach 1:
The control approach is segmented by assigning separate gate control to each transistor, allowing independent temperature compensation for different regions. The first gate of each transistor can be controlled by local temperature sensors, enabling regional temperature uniformity without requiring a complex centralized control system.
Solution Approach 2:
Each multigate transistor performs its own temperature compensation through the first gate, using local temperature information to adjust its threshold voltage. This self-service mechanism eliminates the need for complex external control systems, as each transistor autonomously compensates for its own temperature variations, maintaining regional temperature uniformity with minimal control system complexity.
Data Source
AI summary
A device and method for temperature compensation of an electronic device are disclosed. The device includes a temperature bias controller with a temperature sensor. A bias signal based upon a signal from the temperature sensor is provided to a first gate of a multiple fin gate field effect transistor (multigate FinFET) transistor of a functional block. A second gate of the multigate FinFET transistor receives a control signal to control its operation within the functional block. In this configuration the first gate of the multigate FinFET transistor can be used for temperature compensation while the second gate is used for functional operation of the transistor. Specific embodiments of the present disclosure will be better understood with respect to the figures.