Multi-Gate HEMT Structure Modulating Threshold Voltage
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Solution Overview
Problem
Existing high electron mobility transistors (HEMTs) are limited by a single threshold voltage, reducing application flexibility and prone to switching errors due to high resistance semiconductor materials under the gate.
Innovation Solution
A multi-gate HEMT structure with a substrate, barrier, and buffer layers, along with a multi-field plate structure, which includes multiple conductive finger portions in an alternate and parallel arrangement to modulate threshold voltage and reduce parasitic resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a single threshold voltage is used in HEMT, then the device structure is simple, but the application flexibility is reduced
Solution Approach 1:
The gate electrode is divided into multiple segments (first gate electrode and second gate electrode) with different widths and positions. Each gate segment can be independently controlled to provide different threshold voltages, enabling the HEMT to adapt to various application requirements while maintaining a manageable structural complexity through modular design
2Reliability
If high resistance semiconductor material is used below the gate, then manufacturing is easier, but switching errors and condition loss increase
Solution Approach 1:
The patent applies different semiconductor materials with different resistance characteristics to different regions below the gate electrodes. Specifically, a first semiconductor material is used below the first gate electrode and a second semiconductor material with different resistance is used below the second gate electrode. This localized material optimization reduces switching errors and condition loss in critical areas while maintaining manufacturing feasibility
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The multi-gate structure increases application flexibility, reduces switching errors, and enhances breakdown voltage by mitigating peak electric fields, thereby improving power-conversion efficiency and reducing condition loss.
Implementation Method 1
an electric field generated from the gate electrode is used to deplete a two-dimensional electron gas (2DEG) channel
Implementation Method 2
a two-dimensional electron gas (2DEG) channel at the interface of a wide and narrow energy bandgap semiconductor
Data Source
AI summary
A high electron mobility transistor (HEMT) structure including a substrate, a barrier layer, a buffer layer, a source, a drain, a multi-gate structure, and a multi-field plate structure is provided. The barrier layer is disposed over the substrate. The buffer layer is disposed between the substrate and the barrier layer, and includes a channel region adjacent to an interface between the barrier layer and the buffer layer. The source and the drain are disposed on the barrier layer. The multi-gate structure is disposed between the source and the drain, and includes first conductive finger portions spaced apart from each other. The multi-field plate structure is disposed between the multi-gate structure and the drain, and includes second conductive finger portions spaced apart from each other. The first conductive finger portions and the second conductive finger portions are in an alternate and parallel arrangement.