Multi-Gate Isolation Trenches for Long and Short Channel Control
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Solution Overview
Problem
The semiconductor industry faces challenges in manufacturing low-cost, high-performance, and low-power integrated circuits due to increased complexity from scaling down semiconductor IC dimensions, which affects gate control and introduces short-channel effects in devices like FinFETs and GAA transistors.
Innovation Solution
A continuous poly on diffusion edge (CPODE) process is used to form trenches of appropriate depth for electric performance, providing isolation between adjacent long and short channel devices without damaging source/drain epi layers, utilizing a dry etching process to create deep trenches in long channel devices and shallow trenches in short channel devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If scaling down semiconductor IC dimensions is performed to improve production efficiency and lower costs, then productivity increases and manufacturing cost decreases, but device complexity increases and gate control deteriorates
Solution Approach 1:
The patent segments the semiconductor substrate into distinct first and second active regions with different channel lengths. This segmentation allows different device configurations to coexist on the same substrate, enabling optimized performance for both long-channel and short-channel devices while maintaining scalable manufacturing processes.
Solution Approach 2:
The patent applies local quality by providing different isolation trench depths in different regions of the substrate. The first isolation trench has a first depth optimized for long-channel devices, while the second isolation trench has a second depth optimized for short-channel devices. This localized differentiation allows each region to have optimal electrical characteristics without compromising the other.
2Productivity
If scaling down semiconductor IC dimensions is performed to improve production efficiency and lower costs, then productivity increases and manufacturing cost decreases, but gate control and short-channel effects are adversely affected
Solution Approach 1:
The patent segments the semiconductor substrate into distinct first and second active regions with different channel lengths. This segmentation allows different device configurations to coexist on the same substrate, enabling optimized performance for both long-channel and short-channel devices while maintaining scalable manufacturing processes.
Solution Approach 2:
The patent applies local quality by providing different isolation trench depths in different regions of the substrate. The first isolation trench has a first depth optimized for long-channel devices, while the second isolation trench has a second depth optimized for short-channel devices. This localized differentiation allows each region to have optimal electrical characteristics without compromising the other.
3Reliability
If isolation trenches are formed to provide electrical isolation between adjacent devices, then device performance is improved, but manufacturing process complexity increases
Solution Approach 1:
The patent resolves the isolation complexity by transitioning from a two-dimensional planar isolation approach to a three-dimensional depth-differentiated isolation approach. By varying the trench depth in the vertical dimension rather than adding more lateral isolation structures, the patent achieves superior electrical isolation while maintaining process simplicity and avoiding increased manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This process enhances gate control and mitigates short-channel effects by maintaining isolation and reducing OFF-state current, while maintaining performance and efficiency in multi-gate devices like FinFETs and GAA transistors.
Implementation Method 1
utilizing a dry etching process to create deep trenches in long channel devices and shallow trenches in short channel devices
Data Source
AI summary
Provided are multi-gate devices and methods for fabricating such devices. A method includes forming a first gate structure and a second gate structure, wherein the first gate structure and the second gate structure have different structural configurations; performing a single etching process on the first gate structure and second gate structure to simultaneously form openings of different depths; and forming isolation material in the openings.