Multi-Gate Transistor Isolation Structure for Short-Channel Control
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Solution Overview
Problem
Existing semiconductor devices face challenges in increasing density and improving current control capability while effectively suppressing short channel effects.
Innovation Solution
The semiconductor device incorporates a multi-gate transistor with a multi-channel active pattern, featuring isolation gate structures, insulating patterns, and gate structures that enhance the filling of gaps between active patterns, utilizing insulating materials and conductive materials to improve current control and reduce short channel effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multi-gate transistor with multi-channel active pattern is used, then current control capability is improved and short channel effect is suppressed, but device complexity increases due to additional isolation gate structures and insulating patterns
Solution Approach 1:
The isolation structure is divided into multiple functional components: isolation gate electrode, isolation capping pattern, liner film, and filling film. Each component performs a specific function - the isolation gate electrode provides electrical isolation, the capping pattern provides mechanical protection and planarization, the liner film provides adhesion and barrier functions, and the filling film provides gap filling. This segmentation allows complex isolation requirements to be met through coordinated simple components.
Solution Approach 2:
The isolation structure employs a nested configuration where the liner film is positioned within the filling film, and both are positioned within the recess formed in the isolation capping pattern and isolation gate electrode. This nested arrangement maximizes space utilization and ensures proper electrical isolation while maintaining structural integrity.
2Productivity
If multi-gate transistor with multi-channel active pattern is used, then density is increased, but manufacturing precision requirements increase due to multiple patterning steps for isolation structures
Solution Approach 1:
The recess is formed in the isolation capping pattern and isolation gate electrode before depositing the liner film and filling film. This preliminary action defines the precise boundaries and depth requirements, ensuring that subsequent materials are deposited with controlled dimensions and proper alignment, thereby reducing manufacturing precision requirements.
Solution Approach 2:
Different materials are selected for the liner film and filling film based on their specific properties - the liner film uses material with appropriate adhesion and barrier characteristics, while the filling film uses material with suitable dielectric properties and fillability. This parameter optimization allows each layer to be deposited with standard precision while achieving overall high precision isolation structure.
Data Source
AI summary
Provided is a semiconductor device and method of manufacturing same, the semiconductor device including: a first active pattern which extends in a first direction; an isolation gate electrode on the first active pattern, wherein the isolation gate electrode includes an insulating material and extends in a second direction intersecting the first direction; an isolation capping pattern on the isolation gate electrode; a first recess in the isolation capping pattern and the isolation gate electrode; and a first insulating pattern inside the first recess, wherein the first insulating pattern includes a first liner film and a first filling film, wherein the first liner film includes a material different from the isolation gate electrode and the first filling film.