Multigate Schottky Diode for Extended Gate Length
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional Schottky diodes have limited effective gate length due to modern processing techniques, restricting their power handling and robustness, particularly in ESD/Limiter applications.
Innovation Solution
A multigate Schottky diode design featuring multiple spaced apart Schottky junctions on an active semiconductor region with extended gate fingers, increasing the effective gate length by forming a larger gate receiving channel, and optionally using an insulating substrate to support the gate fingers and contact arms.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If modern processing techniques are used to manufacture Schottky diodes, then manufacturing precision is improved, but the effective gate length is limited
Solution Approach 1:
The gate structure is divided into multiple separate gate fingers instead of a single continuous gate. Each gate finger forms an individual Schottky junction with the active semiconductor region, and multiple such junctions are spaced apart along the gate receiving channel. This segmentation allows the total effective gate length to exceed what can be achieved with a single gate structure using modern processing techniques.
2Reliability
If the effective gate length is increased, then power handling and robustness are improved, but device complexity increases
Solution Approach 1:
The gate is segmented into multiple fingers that can be independently formed using standard processing techniques, avoiding the need for complex single-step processes. Each gate finger is a simple structure that can be manufactured with existing capabilities, while their combined effect achieves the desired increased effective gate length and improved power handling.
Solution Approach 2:
Multiple individual Schottky junctions formed by separate gate fingers are electrically connected in parallel to function as a single unified diode structure. This merging of multiple simple structures achieves the complex outcome of increased power handling and robustness without requiring each individual component to be complex.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances power handling and robustness of Schottky diodes, particularly in ESD/Limiter applications, by increasing the effective gate length and maintaining performance in applications where large etching areas are challenging.
Implementation Method 1
a plurality of electrically connected metallic gate fingers, the metallic gate fingers being in contact with the active semiconductor region to form Schottky junctions
Implementation Method 2
first and second electrically connected metallic contact arms on the active semiconductor region forming ohmic contacts therewith
Implementation Method 3
The electrically insulating substrate region can be produced by ion implantation
Data Source
AI summary
A multigate Schottky diode comprisingan electrically conducting active semiconductor region;first and second electrically connected metallic contact arms on the active semiconductor region forming ohmic contacts therewith;the ohmic contacts being spaced apart on the active semiconductor region to define a gate receiving channel therebetween.a plurality of electrically connected metallic gate fingers, the metallic gate fingers being in contact with the active semiconductor region to form Schottky junctions, the Schottky junctions being spaced apart on the active semiconductor region and extending at least partially along the gate receiving channel.