Multi-Gate Nanostructure Layout With Dielectric Wall S/D Isolation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The integration of multi-gate devices in semiconductor manufacturing is challenging due to increased complexity and the need for improved gate control and reduced short-channel effects.
Innovation Solution
A semiconductor structure is formed with first and second nanostructures along different directions, featuring a first and second gate structure, merged S/D structures separated by a dielectric wall structure that extends beyond the sidewall surface of the gate spacer layer, reducing unwanted connections and leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multi-gate devices are integrated to improve gate control and reduce short-channel effects, then device performance is improved, but fabrication complexity increases
Solution Approach 1:
The patent divides the semiconductor structure into multiple nanostructures arranged along different directions, with separate gate structures for each orientation. This segmentation allows independent optimization of gate control for each nanostructure while maintaining overall device performance, directly addressing the need for improved gate control without requiring a completely complex integrated approach
Solution Approach 2:
The patent implements different gate structures oriented along different directions (first direction and second direction) to provide locally optimized gate control for specific nanostructures. This local quality approach allows tailoring the gate control characteristics to specific device requirements, improving overall reliability without uniformly increasing fabrication complexity across the entire device
2Productivity
If S/D structures are merged to improve integration density, then productivity is improved, but unwanted connections and leakage increase
Solution Approach 1:
The patent introduces a dielectric wall structure as an intermediary element between the first and second source/drain structures. This dielectric wall prevents unwanted electrical connections and leakage between the merged S/D structures while maintaining their physical integration, thus achieving high integration density without the harmful effects of direct unwanted connections
Solution Approach 2:
The patent extracts the dielectric wall structure from the conventional continuous S/D configuration to create a separated structure. By taking out the dielectric material in specific locations to form walls between S/D structures, the patent eliminates unwanted electrical connections while preserving the benefits of merged S/D integration for improved productivity
Data Source
AI summary
Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes first nanostructures formed over a substrate along a first direction, and second nanostructures parallel to the first nanostructures. The semiconductor structure includes a merged S/D structure formed on the first nanostructures and the second nanostructures, and a first gate structure formed over the first nanostructures and the second nanostructures along a second direction. The semiconductor structure includes a second gate structure formed parallel to the first gate structure. The semiconductor structure includes a first dielectric wall structure formed along the first direction. The first gate structure and the merged S/D structure are divided by the first dielectric wall structure, and an end of the first dielectric wall structure extends beyond an outer sidewall surface of the merged S/D structure.