Multijunction Solar Cell Metal Chalcogenide Thin Film Design
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional photovoltaic cells face limitations in efficiency and cost due to the use of crystalline materials and thin film technologies, which are costly to produce and have low energy conversion efficiencies, as well as reliability issues in conventional environmental applications.
Innovation Solution
A multijunction photovoltaic cell structure utilizing thin film metal chalcogenide semiconductor materials with specific bandgaps and optical absorption coefficients, combined with conductor layers and buffer layers, to enhance energy conversion efficiency and reduce manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If crystalline materials are used to manufacture photovoltaic cells, then the structural stability is improved, but the manufacturing cost increases and energy conversion efficiency decreases
Solution Approach 1:
The patent changes the material parameters by using thin film semiconductor materials with specific bandgap energies (0.5-1.0 eV for lower cell, 1.0-2.2 eV for upper cell) instead of conventional crystalline materials. This parameter change enables both cost-effective manufacturing and improved energy conversion efficiency while maintaining structural stability through controlled film deposition processes
Solution Approach 2:
The patent employs composite material structures with multiple layers including P-type absorber layers, N+ type window layers, and tunneling junctions. These composite thin film structures combine different semiconductor materials with complementary properties to achieve high efficiency and stability without the high costs associated with crystalline materials
2Ease of manufacture
If thin film technology is used to manufacture photovoltaic cells, then the manufacturing cost is reduced, but the energy conversion efficiency and reliability deteriorate
Solution Approach 1:
The patent segments the photovoltaic cell into multiple functional layers with distinct roles: P-type absorber layers for photon absorption, N+ type window layers for charge separation, and tunneling junctions for charge transport. This segmentation allows each layer to be optimized for its specific function, achieving high overall efficiency despite using low-cost thin film materials
Solution Approach 2:
The patent optimizes key parameters including bandgap energy (0.5-1.0 eV for lower cell, 1.0-2.2 eV for upper cell), optical absorption coefficient (>10^4 cm^-1), and layer thicknesses. These parameter optimizations enable thin film cells to achieve 15-20% conversion efficiency, matching or exceeding conventional technologies while maintaining cost advantages
3Ease of manufacture
If thin film technology is used to manufacture photovoltaic cells, then the manufacturing cost is reduced, but the reliability in environmental applications deteriorates
Solution Approach 1:
The patent controls critical parameters including resistivity (>10 kohm-cm for buffer layers), bandgap energy, and optical absorption coefficients to ensure stable performance. These parameter controls guarantee that thin film cells maintain reliability in outdoor environmental conditions while preserving manufacturing cost advantages
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The multijunction solar cell structure achieves higher conversion efficiency, ranging from 15% to 20%, and can be manufactured on a large scale, reducing costs and improving reliability.
Implementation Method 1
photo-diode devices that convert electromagnetic radiation into electrical current
Implementation Method 2
first optical absorption coefficient greater than about 104 cm−1 in a wavelength range comprising 400 nm to 800 nm
Data Source
AI summary
A photovoltaic cell structure for manufacturing a photovoltaic device. The photovoltaic cell structure includes a substrate including a surface region. A first conductor layer overlies the surface region. The photovoltaic cell structure includes a lower cell structure. The lower cell structure includes a first P type absorber layer using a first semiconductor metal chalcogenide material and/or other semiconductor material overlying the first conductor layer. The first P type absorber material is characterized by a first bandgap ranging from about 0.5 eV to about 1.0 eV, a first optical absorption coefficient greater than about 104 cm−1. The lower cell structure includes a first N+ type window layer comprising at least a second metal chalcogenide material and/or other semiconductor material overlying the first P absorber layer. The photovoltaic cell structure includes an upper cell structure. The upper cell structure includes a second P type absorber layer using a third semiconductor metal chalcogenide material. The second P type absorber layer is characterized by a second bandgap ranging from about 1.0 eV to 2.2 eV and a second optical absorption coefficient greater than about 104 cm−1. A second N+ type window layer comprising a fourth metal chalcogenide material overlies the second P absorber layer. A tunneling junction layer is provided between the upper cell structure and the lower cell structure.