Multilayer Adhesive Structure for SiC Metal Layer Adhesion
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The adhesion between a semiconductor substrate and a metal layer is insufficient, particularly when the substrate is made of SiC, leading to stress concentration and film peeling issues due to a single interface in the adhesive layer, and increasing film thickness with multiple interfaces results in higher electrical resistance.
Innovation Solution
A semiconductor device with an adhesive layer composed of alternately laminated first and second layers, where the first layer is made of a material containing an element from the substrate and the second layer has higher adhesion to the metal layer, with four or more layers to distribute stress and maintain a thin film thickness, formed using the ALD method in the same chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a two-layer adhesive structure is used to improve adhesion, then adhesion between semiconductor substrate and metal layer is enhanced, but stress concentrates on the single interface leading to film peeling
Solution Approach 1:
The adhesive layer is divided into multiple thin layers (four or more alternating first and second layers) instead of using a single thick layer or a simple two-layer structure. This segmentation creates multiple interfaces that distribute stress throughout the adhesive layer, preventing stress concentration at any single interface and thereby preventing film peeling while maintaining strong adhesion.
2Strength
If multiple layers are formed to prevent stress concentration, then stress distribution is improved, but film thickness increases and electrical resistance increases
Solution Approach 1:
The patent applies local quality by making each individual layer extremely thin (with each first layer and second layer having controlled thickness) while maintaining the overall multi-layer structure. This allows the adhesive layer to have multiple stress-distributing interfaces while keeping the total film thickness minimal, thereby preventing both film peeling and excessive electrical resistance.
Solution Approach 2:
The adhesive layer uses a composite structure of alternating first layers (containing substrate elements like Si, C, or Ga) and second layers (containing metal elements like Ti, Ni, or Cr). This composite multi-layer structure provides both stress distribution capability and controlled electrical resistance by selecting materials with appropriate properties for each layer.
3Length of stationary object
If layer thickness is reduced to maintain thin adhesive layer, then film thickness is kept small, but component diffusion causes adhesion deterioration at interfaces
Solution Approach 1:
The patent forms the complete multi-layer adhesive structure (four or more alternating first and second layers) before forming the metal layer on top. This preliminary formation of the intricate multi-layer structure ensures that all interfaces are properly established with appropriate thickness control, preventing component diffusion issues that would occur if layers were formed sequentially after metal deposition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances adhesion between the substrate and metal layer, prevents film peeling, and maintains a thin adhesive layer thickness, reducing electrical resistance and ensuring robust adhesion without stress concentration.
Implementation Method 1
in the first step, four or more layers including the first and second layers are consecutively formed using an ALD method in the same chamber
Data Source
AI summary
An adhesive layer (18) in which the same number of first and second layers (14,16) having conductivity are alternately laminated in order on a semiconductor substrate (10). A metal layer (24) is formed on the adhesive layer (18). The first layer (14) is composed of a material containing an element composing the semiconductor substrate (10). The second layer (16) has higher adhesion to the metal layer (24) than the first layer (14). The adhesive layer (18) has four or more layers including the first and second layers (14,16). Among the first layers (14) and the second layers (16) constituting the adhesive layer (18), excluding the second layer (16) contacting the metal layer (24), the first layer (14) contacting the semiconductor substrate (10) has the largest film thickness, and excluding the first layer (14) contacting the semiconductor substrate (10), the second layer (16) contacting the metal layer (24) has the largest film thickness.