Multilayer Capacitor Dielectric Structure for Insulation Resistance
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Solution Overview
Problem
Existing multilayer ceramic capacitors face degradation in insulation resistance due to oxygen vacancies under high-temperature and high-pressure conditions, which is exacerbated by the thinning of dielectric layers and severe use environments, necessitating a solution to maintain dielectric constant while preventing such degradation.
Innovation Solution
A multilayer electronic component with a dielectric layer comprising two layers, each with specific molar ratios and grain sizes of Si to Ti, and optionally rare earth elements, to control oxygen vacancy movement and grain growth, thereby enhancing insulation resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the dielectric layer is thinned to achieve higher capacitance, then the capacitance increases, but the insulation resistance degrades due to increased oxygen vacancy movement
Solution Approach 1:
The patent applies local quality by creating a dual-layer dielectric structure where each layer has different Si/Ti molar ratios optimized for specific functions. The first layer (with lower Si/Ti ratio) is optimized for high dielectric constant, while the second layer (with higher Si/Ti ratio) is optimized for suppressing oxygen vacancy movement and maintaining insulation resistance. This local differentiation allows simultaneous achievement of high capacitance and high reliability.
Solution Approach 2:
The patent uses composite materials by combining two different dielectric layer compositions with distinct Si/Ti molar ratios. This composite structure leverages the complementary properties of each layer: one layer provides high dielectric constant for capacitance, while the other provides oxygen vacancy suppression for insulation stability, achieving overall performance enhancement.
2Reliability
If rare earth elements are added to suppress oxygen vacancy generation, then insulation resistance is improved, but the dielectric constant may be compromised
Solution Approach 1:
Instead of uniformly adding rare earth elements throughout the dielectric layer, the patent locally optimizes Si/Ti ratios in different layers. The second layer with higher Si/Ti ratio acts as an oxygen vacancy suppression zone, achieving insulation resistance improvement without requiring rare earth element addition that would compromise dielectric constant.
Solution Approach 2:
The patent changes the compositional parameter (Si/Ti molar ratio) between layers rather than adding rare earth elements. By adjusting the Si/Ti ratio in the second layer to be higher, oxygen vacancy movement is suppressed, achieving insulation resistance improvement while maintaining high dielectric constant through proper compositional design.
3Ease of manufacture
If sintering is performed in a reducing atmosphere to form the body, then the multilayer structure is formed, but oxygen vacancies are generated causing insulation resistance degradation
Solution Approach 1:
The patent applies preliminary anti-action by pre-designing the dual-layer structure with different Si/Ti ratios before sintering. The second layer with higher Si/Ti ratio is specifically configured to counteract the oxygen vacancy generation that occurs during reducing atmosphere sintering, thereby preventing insulation resistance degradation while maintaining manufacturability.
Solution Approach 2:
The patent converts the harmful effect of reducing atmosphere sintering (oxygen vacancy generation) into a benefit by designing the second layer with higher Si/Ti ratio that specifically targets and suppresses oxygen vacancy movement. The sintering process that creates oxygen vacancies also activates the oxygen vacancy suppression mechanism in the second layer, turning a harmful process into a beneficial one.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively maintains dielectric constant and prevents insulation resistance degradation in high-temperature and high-pressure environments by controlling oxygen vacancy movement and grain growth, improving reliability and voltage withstand properties.
Implementation Method 1
oxygen in the oxide may escape during sintering in a reducing atmosphere, resulting in oxygen vacancies and electrons, and the movement of oxygen vacancies under a high-temperature and high-pressure condition may cause degradation in insulation resistance
Implementation Method 2
The body needs to be sintered in a reducing atmosphere
Implementation Method 3
The body needs to be sintered in a reducing atmosphere
Implementation Method 4
1.2≤G1/G2≤2.0 may be satisfied, when an average size of dielectric grains included in the first layer is referred to as G1 and an average size of dielectric grains included in the second layer is referred to as G2
Data Source
AI summary
A multilayer electronic component includes a body including a dielectric layer and an internal electrode disposed alternately with the dielectric layer in a first direction, and an external electrode disposed on the outside of the body and connected to the internal electrode. The dielectric layer includes a first layer and a second layer stacked in the first direction, and each of the first layer and the second layer includes Ba, Ti, and Si. 1.5≤S2/S1≤3.0 is satisfied, when a molar ratio of Si to Ti included in the first layer is referred to as Si and a molar ratio of Si to Ti included in the second layer is referred to as S2.