Multilayer Capacitor Layout in RF Power Amplifiers

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Solution Overview

Problem

The challenge is to increase the number of capacitors in a power amplification circuit without expanding the circuit area, as the area occupied by each capacitor increases with the number of capacitors added.

Innovation Solution

A power amplification circuit design that incorporates a multilayer capacitor element, where two capacitors share a common metal layer as one electrode, allowing them to be stacked in a multilayer structure, thereby occupying the same area as a single capacitor, while a transistor amplifies radio-frequency signals.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If multiple capacitors are mounted in the circuit, then the capacitor count is increased, but the circuit area is increased

Engineering Contradiction:
Improvecapacitor countVSAvoidcircuit area
Core Design Contradiction:
Quantity of substanceVSArea of stationary object

Solution Approach 1:

The patent applies nesting by placing one capacitor structure inside or overlapping with another capacitor structure in the vertical dimension. Specifically, a first capacitor and a second capacitor are arranged such that they share common electrodes and overlap in the vertical direction, allowing one capacitor to be 'nested' within the spatial footprint of the other, thereby increasing capacitor count without proportionally increasing circuit area

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The patent transitions from a planar two-dimensional arrangement of capacitors to a three-dimensional stacked configuration. By utilizing the vertical dimension (thickness direction) to stack capacitors with overlapping electrode arrangements, the design accommodates multiple capacitors within the same planar footprint, effectively moving the solution from 2D to 3D space

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Quantity of substance

If multiple capacitors are mounted in the circuit, then the capacitor count is increased, but the device complexity is increased

Engineering Contradiction:
Improvecapacitor countVSAvoidcircuit complexity
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent merges multiple capacitor structures by having them share common electrodes. The first capacitor and second capacitor share the second electrode, which is a common metal layer, thereby combining multiple capacitor functions into a unified structure that reduces the number of discrete components and interconnections required

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent makes the second electrode universal by using it as a shared electrode for both the first capacitor and the second capacitor. This multi-functional electrode serves dual purposes, connecting to different nodes (first node and second node) while being part of both capacitor structures, thereby reducing overall circuit complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS10326413B2Power amplification circuit
Publication Date: 2019.06.18 MURATA MFG CO LTD
  • US10326413B2 patent drawing
  • US10326413B2 patent drawing
  • US10326413B2 patent drawing

AI summary

A power amplification circuit that includes: a capacitor element in which a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and a third metal layer are sequentially stacked, the capacitor element including a first capacitor in which the first metal layer serves as one electrode thereof and the second metal layer serves as another electrode thereof, and a second capacitor in which the second metal layer serves as one electrode thereof and the third metal layer serves as another electrode thereof; and a transistor that amplifies a radio-frequency signal. The radio-frequency signal is supplied to the one electrode of the first capacitor. The other electrode of the first capacitor and the one electrode of the second capacitor are connected to a base of the transistor, and the other electrode of the second capacitor is connected to the emitter of the transistor.