Multilayer Capacitor Dielectric Structure for Sn Boundary Control
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Solution Overview
Problem
Existing multilayer ceramic capacitors face challenges in achieving high reliability and capacitance while maintaining miniaturization, especially in harsh automotive environments, due to variations in microstructure, element distribution, and process conditions, despite the use of additive elements like valence fixed acceptors and rare earth elements.
Innovation Solution
A multilayer electronic component with a dielectric layer structure that includes a boundary portion with a specific atomic ratio of Sn/(Ba+Ti+Sn) between 1.0% and 1.5%, and dielectric grains with a core-shell structure, where the shell portion has an atomic ratio of 0.5% < Sn/(Ba+Ti+Sn) ≤ 5.0%, along with controlled grain sizes and additive compositions to enhance reliability and capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additive elements are added to achieve high capacitance and reliability, then capacitance and reliability are improved, but microstructure variation and element distribution inconsistency occur
Solution Approach 1:
The patent applies local quality by creating distinct regions within the dielectric layer with different Sn concentrations. The boundary portion has a specific Sn concentration range (1.0-1.5 at%) while the central portion has a different range (0.5-5.0 at%), optimizing each region's properties for overall reliability improvement while controlling microstructure variation.
Solution Approach 2:
The patent utilizes parameter changes by precisely controlling the Sn concentration parameter in different dielectric regions. By adjusting Sn concentration from 1.0-1.5 at% in boundary portions to 0.5-5.0 at% in central portions, the patent optimizes dielectric properties and reliability while maintaining consistent microstructure.
2Reliability
If Sn concentration is increased to improve dielectric constant, then dielectric constant is improved, but reliability under high temperature and pressure deteriorates
Solution Approach 1:
The patent applies local quality by creating distinct regions within the dielectric layer with different Sn concentrations. The boundary portion has a specific Sn concentration range (1.0-1.5 at%) while the central portion has a different range (0.5-5.0 at%), optimizing each region's properties for overall reliability improvement while controlling microstructure variation.
Solution Approach 2:
The patent utilizes parameter changes by precisely controlling the Sn concentration parameter in different dielectric regions. By adjusting Sn concentration from 1.0-1.5 at% in boundary portions to 0.5-5.0 at% in central portions, the patent optimizes dielectric properties and reliability while maintaining consistent microstructure.
3Quantity of substance
If dielectric layer composition is optimized for high capacitance, then capacitance is improved, but manufacturing precision becomes difficult to control
Solution Approach 1:
The patent applies segmentation by dividing the dielectric layer into distinct regions (boundary portions and central portions) with different Sn concentration ranges. This segmentation allows independent optimization of each region's composition, achieving high overall capacitance while simplifying manufacturing control through region-specific parameter specifications.
Solution Approach 2:
The patent applies local quality by creating distinct regions within the dielectric layer with different Sn concentrations. The boundary portion has a specific Sn concentration range (1.0-1.5 at%) while the central portion has a different range (0.5-5.0 at%), optimizing each region's properties for overall reliability improvement while controlling microstructure variation.
Data Source
AI summary
A multilayer electronic component includes a body including a dielectric layer and internal electrodes; and an external electrode disposed on the body, wherein the dielectric layer includes a boundary portion, a region adjacent to a boundary with the internal electrode, and wherein the boundary portion includes a region satisfying an atomic ratio: 1.0%≤Sn/(Ba+Ti+Sn)≤1.5%.