Multilayer Conductive Structure for Semiconductor Electromigration Resistance
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Solution Overview
Problem
Semiconductor devices face challenges in achieving high reliability and improved electro-migration characteristics due to the complexity and integration demands in the electronics industry.
Innovation Solution
Incorporation of a conductive structure within an insulating structure, comprising a barrier layer, an anti-migration layer made of manganese, a liner, and a capping layer, with a thermal treatment process to enhance electro-migration resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional conductive structures are used, then device complexity is reduced, but electro-migration characteristics deteriorate
Solution Approach 1:
The conductive structure is divided into multiple functional layers: barrier layer, anti-migration layer, liner layer, and capping layer. Each layer serves a specific function in preventing electro-migration and diffusion, thereby improving reliability without requiring a complete structural redesign.
Solution Approach 2:
The conductive structure employs a composite multi-layer configuration combining different materials (e.g., TaN barrier layer, Mn anti-migration layer, Co liner layer, Cu conductive layer). This composite approach leverages the unique properties of each material to collectively enhance electro-migration resistance while maintaining structural integrity.
2Reliability
If multi-layer conductive structure is implemented, then electro-migration resistance is improved, but manufacturing process complexity increases
Solution Approach 1:
The barrier layer and anti-migration layer are formed in advance before the conductive layer is deposited. This preliminary action prevents potential diffusion and electro-migration issues before they can occur during subsequent processing and device operation, simplifying the overall manufacturing flow.
Solution Approach 2:
The multi-layer structure is built through sequential deposition where each layer is nested within or upon the previous layer (barrier layer → anti-migration layer → liner layer → conductive layer → capping layer). This nested approach allows for systematic formation of each layer using standard semiconductor fabrication techniques.
3Stability of the object's composition
If anti-migration layer is added, then diffusion phenomenon is mitigated, but device structure becomes more complex
Solution Approach 1:
The anti-migration layer acts as an intermediary barrier between the barrier layer and the liner/conductive layer. It specifically prevents diffusion of metal atoms (such as Cu) into the liner layer, thereby stabilizing the compositional integrity of each layer without requiring fundamental changes to the overall device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure significantly improves electro-migration characteristics and reliability of semiconductor devices by mitigating diffusion and cutting phenomena, thereby enhancing overall device performance.
Implementation Method 1
an anti-migration layer on the barrier layer
Implementation Method 2
performing a thermal treatment process
Data Source
AI summary
A semiconductor device including an insulating structure, and a conductive structure in the insulating structure may be provided. The conductive structure includes a barrier layer, an anti-migration layer on the barrier layer, a liner on the anti-migration layer, a conductive layer on the liner, and a capping layer covering a top surface of the barrier layer and a top surface of the anti-migration layer. The capping layer and the liner include Co. The anti-migration layer includes Mn.