Multilayer Conductor Structure for Oxide Semiconductor Devices
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Solution Overview
Problem
Conventional oxide semiconductor TFTs face issues with light reflection and changing electrical resistance, which affect the reliability and display contrast of liquid crystal display devices, particularly due to the placement of metal oxide or reaction layers between the oxide semiconductor and source/drain electrodes.
Innovation Solution
A semiconductor device with a multilayer conductor structure comprising a first metal oxide layer, a second metal oxide layer, and a metal layer, where the first metal oxide layer is formed by reacting the oxide semiconductor with a metal layer, and the second metal oxide layer is oxidized from the metal layer, ensuring no overlap with the oxide semiconductor layer, thereby reducing light reflection and stabilizing electrical resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal oxide layer or reaction layer is formed between the oxide semiconductor layer and source/drain electrodes, then contact between the oxide semiconductor and electrodes is enhanced, but light reflection from the source/drain electrodes increases
Solution Approach 1:
The patent introduces a light-blocking layer as an intermediary component between the source/drain electrodes and the oxide semiconductor layer. This light-blocking layer serves as a mediator that prevents light from reaching the metal oxide layer and causing reflection, while not interfering with the electrical contact function. The light-blocking layer thus resolves the contradiction by adding a new element that addresses the harmful light reflection without compromising the electrode contact reliability.
2Reliability
If the oxide semiconductor layer is placed under the metal oxide layer or reaction layer, then electrode contact is improved, but external light may be reflected causing deteriorated display contrast
Solution Approach 1:
The light-blocking layer acts as an intermediary that prevents external light from reaching the oxide semiconductor layer and being reflected. This mediator layer is positioned between the light source and the oxide semiconductor layer, blocking the harmful light paths while allowing the electrical contact function to remain intact through the metal oxide layer.
3Adaptability or versatility
If a capacitor element is formed on the substrate with oxide semiconductor TFT, then device functionality is enhanced, but changing electrical resistance of the oxide semiconductor layer causes changing capacitance
Solution Approach 1:
The patent extracts the problematic oxide semiconductor layer from the capacitor element structure. By removing the oxide semiconductor layer from the capacitor region and replacing it with an insulating layer, the capacitor element no longer relies on the variable resistance properties of the oxide semiconductor. This extraction of the unstable component resolves the capacitance stability issue while maintaining overall device functionality through separate transistor and capacitor structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces light reflection and suppresses changes in capacitance associated with the oxide semiconductor layer, enhancing the reliability and display contrast of liquid crystal display devices by eliminating the oxide semiconductor layer under electrodes and stabilizing electrical resistance.
Implementation Method 1
the first metal oxide layer is formed by reacting the oxide semiconductor with a metal layer
Implementation Method 2
the second metal oxide layer is oxidized from the metal layer
Data Source
AI summary
A semiconductor device (1001) includes an oxide semiconductor layer (7) and a conductor layer (13a, 13b, 13c, 13s) supported on a substrate (1). The oxide semiconductor layer (7) contains a first metallic element. The conductor layer (13a, 13b, 13c, 13s) has a multilayer structure including a first metal oxide layer (m1) containing the first metallic element, a second metal oxide layer (m2) on the first metal oxide layer, the second metal oxide layer (m2) containing an oxide of a second metallic element, and a metal layer (M) on the second metal oxide layer, the metal layer (M) containing the second metallic element. The first metal oxide layer (m1) and the oxide semiconductor layer (7) are made of the same oxide film. When viewed from the normal direction of the substrate 1, the first metal oxide layer (m1) and the oxide semiconductor layer (7) do not overlap.