Multi-Layer Dielectric Film Structure for Low-k Pattern Stability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current low-k dielectric materials used in semiconductor manufacturing lack ideal hardness and strength, leading to unbalanced stresses during patterning processes that cause deformation and critical dimension mismatch issues, affecting the integrity of interconnects.
Innovation Solution
A multi-layer film structure comprising a first porous dielectric layer with a porogen, an insert layer with higher hardness and K-value, and a second dielectric layer, where the insert layer provides additional structural support to mitigate stress and maintain low capacitance, thereby stabilizing the dielectric layers during patterning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If low-k dielectric materials are used to reduce RC delay, then capacitance is reduced, but hardness and strength deteriorate
Solution Approach 1:
The patent applies composite materials by combining low-k dielectric materials with reinforcing materials to create a composite dielectric structure. This composite approach maintains the low capacitance property of the low-k material while adding the strength and hardness of the reinforcing material, thereby resolving the contradiction between energy loss reduction and mechanical strength.
2Loss of energy
If low-k dielectric materials are used to reduce RC delay, then capacitance is reduced, but stress balance deteriorates causing deformation
Solution Approach 1:
The composite dielectric structure balances internal stresses by combining materials with complementary mechanical properties. The reinforcing material compensates for the stress imbalances inherent in low-k materials, preventing deformation and maintaining structural stability during patterning processes.
Solution Approach 2:
The patent applies local quality by strategically placing reinforcing materials in specific regions where stress concentration occurs. This localized reinforcement approach maintains stress balance in critical areas while preserving the low-k properties in other regions, resolving the contradiction between energy loss reduction and stress stability.
3Ease of manufacture
If single-layer dielectric structure is used, then manufacturing is simpler, but structural support during patterning is insufficient
Solution Approach 1:
The patent applies segmentation by dividing the dielectric structure into multiple functional layers: a low-k dielectric layer for capacitance reduction and a reinforcing layer for structural support. This segmented approach maintains manufacturing simplicity through standardized layer deposition processes while providing enhanced structural support during patterning operations.
Data Source
AI summary
A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for weaker and softer dielectric layer. The insert layer may be applied between two weaker dielectric layers or the insert layer may be used with a single layer of dielectric material. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.