Multilayer Film Etching Pressure Segmentation
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Solution Overview
Problem
Sputter etching of multilayer films containing metallic magnetic materials under low pressure conditions often results in separation and cracking, while maintaining high etching rate and anisotropy is challenging due to organic impurities and pressure differences.
Innovation Solution
A two-step sputter etching method is employed, where the initial step is performed at a higher pressure to suppress gas expansion and leakage of gas-containing defects, followed by a second step at a lower pressure to achieve high etching rate and anisotropy, with specific pressure settings and high-frequency bias power applied.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If sputter etching is performed under low pressure condition, then etching rate and etching anisotropy are improved, but separation and cracking of multilayer film occur
Solution Approach 1:
The etching process is divided into two distinct steps: a first step at comparatively high pressure to prevent film separation and cracking, and a second step at low pressure to achieve high etching rate and anisotropy. This segmentation allows each step to optimize for its specific function without compromising the other.
Solution Approach 2:
The first etching step at comparatively high pressure is performed preliminarily to suppress gas expansion in defects and prevent film separation before the main etching step. This preliminary action prepares the film structure to withstand the subsequent low-pressure etching without damage.
2Manufacturing precision
If sputter etching is performed under low pressure condition, then etching anisotropy is improved, but separation and cracking of multilayer film occur
Solution Approach 1:
The etching process is divided into two distinct steps: a first step at comparatively high pressure to prevent film separation and cracking, and a second step at low pressure to achieve high etching rate and anisotropy. This segmentation allows each step to optimize for its specific function without compromising the other.
Solution Approach 2:
The first etching step at comparatively high pressure is performed preliminarily to suppress gas expansion in defects and prevent film separation before the main etching step. This preliminary action prepares the film structure to withstand the subsequent low-pressure etching without damage.
3Use of energy by moving object
If pressure in processing chamber is reduced, then ion energy and linearity are improved, but gas expansion in defects increases causing film separation
Solution Approach 1:
The etching process is divided into two distinct steps: a first step at comparatively high pressure to prevent film separation and cracking, and a second step at low pressure to achieve high etching rate and anisotropy. This segmentation allows each step to optimize for its specific function without compromising the other.
Solution Approach 2:
The first etching step at comparatively high pressure is performed preliminarily to suppress gas expansion in defects and prevent film separation before the main etching step. This preliminary action prepares the film structure to withstand the subsequent low-pressure etching without damage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively suppresses separation and cracking of the multilayer film while maintaining a high etching rate and anisotropy, ensuring the integrity and performance of the etched film.
Implementation Method 1
The plasma etching includes etching mainly using reaction of active species and sputter etching mainly using impact of ions
Implementation Method 2
plasma etching is performed to form a fine structure
Data Source
AI summary
In a method for etching a multilayer film of a target object by using a plasma processing apparatus, the multilayer film of the target object includes a layer made of a metal magnetic material and a mask is provided on the multilayer film. The multilayer film is etched in a state where a pressure in a processing chamber of the plasma processing apparatus is set to a first pressure that is a relatively high pressure. Subsequently, the multilayer film is further etched in a state where the pressure in the processing chamber is set to a second pressure lower than the first pressure.