Multilayer Gate Electrode Transistor for Display Panel Resolution
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Solution Overview
Problem
Current display apparatuses face challenges in achieving high resolution and flexibility while minimizing thickness and power consumption, particularly in the design of light-emitting diodes and transistors, where the arrangement of sub-layers and electrodes affects the formation of electric fields and capacitance.
Innovation Solution
The display apparatus incorporates a thin-film transistor with a gate electrode comprising sub-layers of different widths and materials, a storage capacitor with overlapping electrodes, and a semiconductor layer with low-resistance areas, allowing for a channel area along the side surface of the sub-layer, which reduces the occupied area and enables high-resolution and flexible panel designs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional single-layer gate electrode is used, then the structure is simple, but the electric field formation and capacitance control are insufficient
Solution Approach 1:
The gate electrode is divided into multiple sub-layers (first sub-layer and second sub-layer) with different widths and materials. This segmentation allows independent optimization of each layer's function - the first sub-layer provides broader coverage for electric field formation while the second sub-layer provides precise control over the channel region, resolving the contradiction between simple structure and effective electric field formation.
Solution Approach 2:
Different sub-layers of the gate electrode are assigned different local properties - the first sub-layer has a wider width for overall electric field coverage, while the second sub-layer has a narrower width aligned with the channel for precise capacitance control. This local differentiation enables both simple overall structure and sophisticated local electric field management.
2Reliability
If the transistor occupies more area, then the electric field coverage is improved, but the resolution and flexibility of the display panel are reduced
Solution Approach 1:
The invention transitions from a conventional planar transistor layout to a three-dimensional stacked structure with multiple gate sub-layers at different heights. This vertical dimensionality change allows the transistor to achieve sufficient electric field coverage through stacked layers rather than horizontal expansion, thereby maintaining high display resolution and panel flexibility while ensuring adequate electric field coverage.
3Reliability
If the gate electrode and capacitor electrode are separated into different structures, then the functions are optimized independently, but the manufacturing process becomes more complex
Solution Approach 1:
The gate electrode and capacitor electrode are merged into a single integrated multi-layer structure. The first sub-layer of the gate electrode simultaneously serves as the capacitor electrode, while the second sub-layer provides the active gate function. This merging allows independent optimization of capacitance control and gate function while simplifying the manufacturing process by reducing the number of separate fabrication steps.
Data Source
AI summary
A display apparatus includes: a transistor; a storage capacitor connected to the transistor; and a light-emitting diode electrically connected to the transistor and the storage capacitor, wherein the transistor includes: a gate electrode on a substrate and having a first sub-layer and a second sub-layer on the first sub-layer; and a semiconductor layer having a channel area, a first low-resistance area, and a second low-resistance area, wherein the channel area overlaps the gate electrode, and the first and second low-resistance areas are on both sides of the channel area, a width of the first sub-layer is greater than a width of the second sub-layer, the channel area is arranged along a side surface of the second sub-layer, the storage capacitor includes a first capacitor electrode and a second capacitor electrode, and the first capacitor electrode is on a same layer and includes a same material as the gate electrode.