Multi-Layer Integrated Insulator for Reliable Stacked Transistors
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Solution Overview
Problem
Forming a thick integrated insulator with a single layer is challenging due to defects that occur during the process of forming lower and upper electrodes in stacked transistor structures, which affects the integration density and reliability of integrated circuit devices.
Innovation Solution
The use of a multi-layer integrated insulator with different materials for the inner and outer layers, where the outer layer extends between the inner layer and the gate electrodes, reducing defects by etching the upper portion of the lower electrode to a height between the uppermost and lowermost end of the insulator, and employing multiple deposition processes to ensure complete filling of the insulator region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a thick integrated insulator is formed with a single layer, then the manufacturing process is simpler, but defects occur during the process of forming lower and upper electrodes in stacked transistor structures
Solution Approach 1:
The integrated insulator is divided into multiple layers (first integrated insulator layer and second integrated insulator layer) with different materials and functions. The first layer provides mechanical support and isolation, while the second layer provides electrical insulation and defect reduction, resolving the contradiction between manufacturing simplicity and reliability.
Solution Approach 2:
The patent uses composite material structure where the first integrated insulator layer comprises a first material and the second integrated insulator layer comprises a second material different from the first material. This composite approach allows each layer to contribute its specific properties, reducing defects while maintaining manufacturability.
2Reliability
If the integrated insulator thickness is increased to improve isolation, then the integration density decreases
Solution Approach 1:
By segmenting the thick insulator into two functional layers, the patent achieves effective isolation without requiring excessive total thickness. The first layer provides structural isolation while the second layer provides electrical isolation, allowing optimized thickness distribution that maintains integration density.
Solution Approach 2:
Different regions of the insulator structure have different material compositions and thicknesses optimized for their specific functions. The first layer is optimized for mechanical support and general isolation, while the second layer is optimized for electrical insulation, allowing each region to contribute efficiently to overall isolation quality without unnecessary thickness.
3Manufacturing precision
If multiple deposition processes are used to form the multi-layer insulator, then the manufacturing complexity increases, but complete filling of the insulator region is ensured
Solution Approach 1:
The insulator formation is segmented into multiple deposition processes, with each process depositing a specific layer with controlled thickness and material properties. This segmentation ensures complete filling of the insulator region while allowing optimization of each individual deposition step, balancing precision with manageable process complexity.
Solution Approach 2:
The first integrated insulator layer is formed as a preliminary structure before forming the second layer. This preliminary action establishes a foundation that guides subsequent deposition processes, ensuring complete filling and proper material distribution while organizing the complexity into manageable sequential steps.
Data Source
AI summary
An integrated circuit device may comprise an upper transistor that is on a substrate. The upper transistor may comprise an upper channel region. The integrated circuit device may further comprise a lower transistor that is between the substrate and the upper transistor. The lower transistor may comprise a lower channel region. The integrated circuit device may further include an integrated insulator that is between the lower channel region and the upper channel region. The integrated insulator may comprise an outer layer and an inner layer in the outer layer, wherein the inner layer and the outer layer comprise different materials.