Multilayer Optical Sensor Structure for Visible-to-Mid-IR Detection

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Solution Overview

Problem

Current optical sensors are limited in their ability to detect light across a wide spectrum, particularly in the visible, near-infrared, short-wave infrared, and mid-infrared ranges, due to the lack of effective multi-layer structures that can efficiently absorb and process light across these wavelengths.

Innovation Solution

The optical sensing apparatus incorporates multiple photo-detecting layers with specific absorption regions, buffer layers, and doping configurations, including silicon, black phosphorus, and germanium, to enhance light absorption and carrier amplification, with graphene or other two-dimensional materials used to improve performance across the visible to mid-infrared spectrum.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If multiple photo-detecting layers are stacked to detect different wavelength ranges, then the spectral detection range is improved, but the device complexity increases

Engineering Contradiction:
Improvespectral detection rangeVSAvoidmulti-layer structure complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The optical sensing apparatus divides the detection spectrum into multiple segments by stacking different photo-detecting layers (first photo-detecting layer for visible/NIR, second photo-detecting layer for SWIR/MIR) with buffer layers between them. Each layer is optimized for specific wavelength ranges, allowing comprehensive spectral coverage while maintaining manageable structural complexity through systematic segmentation.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements a nested multi-layer structure where photo-detecting layers and buffer layers are stacked sequentially, with each layer nested within the overall device architecture. The buffer layers are positioned between and around the photo-detecting layers, creating a nested configuration that integrates multiple functional layers into a compact vertical structure.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Measurement precision

If buffer layers are added between photo-detecting layers to prevent carrier relaxation and oxidation, then the sensitivity is improved, but the device complexity increases

Engineering Contradiction:
Improvedetection sensitivityVSAvoidlayer structure complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

Buffer layers serve as intermediary elements positioned between the first and second photo-detecting layers. These buffer layers mediate the interaction between adjacent photo-detecting layers by preventing carrier relaxation and material oxidation, thereby protecting the photo-detecting layers while maintaining a relatively simple overall structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The buffer layers are designed as thin protective layers (graphene or other two-dimensional materials) that provide essential protection against carrier relaxation and oxidation. These relatively thin buffer layers offer effective protection with minimal impact on device complexity, acting as cost-effective protective barriers.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

3Productivity

If charge carrier amplification is implemented in the first photo-detecting layer, then the detection efficiency is improved, but the device complexity increases

Engineering Contradiction:
Improvedetection efficiencyVSAvoiddoping structure complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The first photo-detecting layer incorporates localized p-type or n-type doping regions to create charge carrier amplification zones. This local quality enhancement allows efficient charge carrier multiplication in specific areas of the first photo-detecting layer without requiring complex doping structures throughout the entire device, thereby improving detection efficiency while controlling complexity.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables optical sensors to detect light across a wide spectrum, from visible to mid-infrared, improving sensitivity and efficiency by amplifying charge carriers and preventing carrier relaxation and material oxidation, thus enhancing their applicability in various sensing applications.

Implementation Method 1

a first photo-detecting layer having a first absorption region configured to absorb light in at least a visible spectrum

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 2

a second photo-detecting layer formed over the first photo-detecting layer, the second photo-detecting layer having a second absorption region configured to absorb light in at least a mid-infrared spectrum

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 3

the first photo-detecting layer includes a charge region configured to amplify charge-carriers generated in the second absorption region

Methodology Applied
Scientific EffectImpact ionization: Avalanche Breakdown

Data Source

PatentUS20240178337A1Optical Sensing Apparatus
Publication Date: 2024.05.30 ARTILUX INC
  • US20240178337A1 patent drawing
  • US20240178337A1 patent drawing
  • US20240178337A1 patent drawing

AI summary

An optical sensing apparatus includes a first photo-detecting layer having a first absorption region configured to absorb light in at least a visible spectrum; a second photo-detecting layer formed over the first photo-detecting layer, the second photo-detecting layer having a second absorption region configured to absorb light in at least a mid-infrared spectrum; a first buffer layer formed over the second photo-detecting layer; and a second buffer layer formed over the first photo-detecting layer and under the second photo-detecting layer.