Multilayer Oxide Superconductor with Magnetic Field Trap Layers
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Solution Overview
Problem
Yttrium-based superconductors face challenges in maintaining high superconductivity properties due to magnetic flux movement, which degrades critical current density and transition temperature, especially in applications like power cables where magnetic fields are present, and existing techniques for improving magnetic field characteristics are limited by the instability of low-angle grain boundaries.
Innovation Solution
A multilayer oxide superconductor structure with high-density magnetic field trap layers and a low-density magnetic field trap layer, formed using a fluorocarboxylate-methanol solution and varying humidification or gas flow rates during thermal processing, to stabilize low-angle grain boundaries and enhance pinning centers, thereby maintaining high superconductivity properties even with increased film thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single-layer oxide superconductor structure is used, then the fabrication process is simple, but the superconductivity properties degrade under magnetic fields due to magnetic flux movement
Solution Approach 1:
The oxide superconductor is divided into multiple layers with different densities of magnetic field trap layers. High-density magnetic field trap layers are stacked in parallel to the substrate, while low-density magnetic field trap layers are interposed between them. This segmentation allows different regions to perform different functions: high-density layers provide strong pinning centers for magnetic flux, while low-density layers maintain superconductivity pathways, thereby suppressing magnetic flux movement and stabilizing superconductivity properties under magnetic fields.
2Manufacturing precision
If the film thickness is increased to improve superconductivity properties, then the critical current density increases, but the low-angle grain boundaries become unstable and degrade performance
Solution Approach 1:
Different regions of the oxide superconductor are given different local qualities through the multilayer structure. The high-density magnetic field trap layers provide strong pinning centers with narrow grain boundary widths to stabilize low-angle grain boundaries, while the low-density magnetic field trap layers maintain adequate superconductivity. This local differentiation allows the film to achieve high critical current density through increased thickness while maintaining grain boundary stability through localized structural control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure effectively suppresses the degradation of superconductivity properties under magnetic fields, maintaining high critical current density and transition temperature, and allows for the fabrication of superconductors suitable for applications in environments with self-magnetic fields, such as power cables.
Implementation Method 1
enhance pinning centers, thereby maintaining high superconductivity properties even with increased film thickness
Implementation Method 2
(100) planes of neighboring ones of the crystal grains are oriented to form therebetween an oblique angle ranging from zero to four degrees
Data Source
AI summary
An oxide superconductor with superconduction properties being improved by effectively introducing a pinning center thereinto and its fabrication method are disclosed. The superconductor has a high-crystallinity oxide superconductor film which is formed on a substrate with a <001> direction of crystal grain being oriented almost perpendicularly to the substrate and with (100) planes of neighboring crystal grains being oriented to form an oblique angle ranging from 0 to 4 degrees or 86 to 90 degrees. The film has a multilayer structure including a plurality of high-density magnetic field trap layers stacked in almost parallel to the substrate and a low-density magnetic field trap layer sandwiched therebetween. An average grain boundary width of the high-density trap layers in a cross-section horizontal to the substrate is 80 nm or less. The width is less than an average grain boundary width of the low-density trap layer in its cross-section horizontal to the substrate.