Multi-Layer Photoelectric Conversion Device for Visible and Near-Infrared Imaging
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Solution Overview
Problem
Existing imaging devices face challenges in efficiently converting both visible and near-infrared light due to the need for ultra-high energy ion implantation and specialized equipment, leading to increased costs and complexity in manufacturing high-sensitive sensors.
Innovation Solution
The implementation of an imaging device with multiple photoelectric conversion device layers, where each layer is optimized for specific wavelength bands, and a wiring layer that secures optical paths and connects layers through through-via holes, allowing for simultaneous or staggered charge accumulation and image formation without the need for ultra-high energy ion implantation or specialized equipment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If ion implantation with ultra-high energy is performed to form deep potential for near-infrared photoelectric conversion, then photoelectric conversion sensitivity is improved, but manufacturing cost and device complexity increase
Solution Approach 1:
The patent divides the photoelectric conversion function into multiple layers: a first photoelectric conversion layer for visible light and a second photoelectric conversion layer for near-infrared light. Each layer is optimized for its specific wavelength range, allowing the second layer to be positioned at an appropriate depth without requiring ultra-high energy ion implantation through the entire substrate thickness.
Solution Approach 2:
The patent utilizes the depth dimension by forming the second photoelectric conversion layer at a greater depth than the first layer. This vertical stacking allows near-infrared photoelectric conversion to occur at the optimal depth for that wavelength range, achieving high sensitivity without requiring ultra-high energy implantation processes.
2Measurement precision
If ion implantation with ultra-high energy is performed to form deep potential for near-infrared photoelectric conversion, then photoelectric conversion sensitivity is improved, but manufacturing cost increases
Solution Approach 1:
The patent segments the photoelectric conversion into multiple layers with the second layer dedicated to near-infrared conversion. This allows the second layer to be formed at optimal depth without requiring expensive ultra-high energy ion implantation equipment and processes, thereby reducing manufacturing costs while maintaining sensitivity.
3Adaptability or versatility
If multiple photoelectric conversion layers are stacked to capture different wavelength bands, then imaging versatility is improved, but device complexity increases
Solution Approach 1:
The patent merges multiple photoelectric conversion functions into a single integrated device structure. The first and second photoelectric conversion layers are stacked and electrically connected through conductive regions, allowing simultaneous capture of visible and near-infrared light in one device without requiring separate imaging systems.
Solution Approach 2:
The imaging device achieves multi-functionality by incorporating both visible light photoelectric conversion (first layer) and near-infrared photoelectric conversion (second layer) in the same device. This allows the device to perform multiple imaging functions across different wavelength bands, enhancing versatility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient photoelectric conversion of both visible and near-infrared light, reducing manufacturing costs and complexity while enabling the capture of high-quality images across various wavelength bands with improved sensitivity and flexibility in image timing.
Implementation Method 1
photodiodes which perform photoelectric conversion on incident light
Data Source
AI summary
An imaging device includes: plural photoelectric conversion device layers in which photoelectric conversion devices performing photoelectric conversion of incident light are formed; and a wiring layer sandwiched by respective photoelectric conversion device layers, in which wirings for reading charges from the photoelectric conversion devices are formed.