Multilayer Semiconductor Structure With Void-Suppressed Hillocks
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Solution Overview
Problem
Conventional multilayer semiconductor structures face challenges in inhibiting the formation of hillocks on the front surface of semiconductor layers, which can deteriorate device characteristics due to dislocation propagation from the buffer layer to the semiconductor layer.
Innovation Solution
A multilayer semiconductor structure is developed with a void between the buffer layer and the semiconductor layer, specifically using an AlN buffer layer and etching to form an etch pit, which inhibits dislocation propagation and improves crystallinity, thereby preventing hillock formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dislocation propagation is inhibited to prevent hillock formation, then the crystallinity of the semiconductor layer is improved, but additional buffer layer structures are required
Solution Approach 1:
Different regions of the buffer layer structure have different compositions and functions: the AlN buffer layer provides strong dislocation blocking, the AlGaN barrier layer filters remaining dislocations, and the AlGaN cladding layer provides lattice matching. Each local region is optimized for its specific function to achieve high crystallinity
Data Source
AI summary
A multilayer semiconductor structure of the present disclosure includes a substrate a buffer layer disposed on the substrate and a semiconductor layer disposed on the buffer layer. A void is provided between the buffer layer and the semiconductor layer.