Multi-Layer SiC Semiconductor Component for Abnormal Crystal Growth
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Solution Overview
Problem
Existing components for fabricating SiC semiconductors face issues with abnormal crystal growth and plasma resistance, leading to degraded quality and increased production costs due to frequent replacements.
Innovation Solution
A manufacturing method involving multiple layers of SiC with different transmittances, formed using distinct groups of raw material gas injecting introduction holes, to suppress abnormal crystal growth and enhance plasma resistance, allowing for the formation of a regenerating unit to extend the component's lifespan.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single layer of SiC material is used to manufacture a component for fabricating a semiconductor, then the manufacturing process is simple, but abnormal crystal growth occurs leading to degraded quality
Solution Approach 1:
The component is divided into multiple layers (first layer and second layer) with different transmittance characteristics. The first layer has lower transmittance while the second layer has higher transmittance, allowing each layer to serve different functional purposes in controlling plasma distribution and preventing abnormal crystal growth throughout the component structure.
Solution Approach 2:
Different regions of the component are assigned different transmittance properties through the multi-layer structure. The first layer with lower transmittance is positioned to control plasma penetration in specific areas, while the second layer with higher transmittance allows plasma passage in other regions, creating localized quality variations that prevent uniform abnormal crystal growth.
2Ease of manufacture
If Si material is used instead of SiC material, then the manufacturing cost is lower, but plasma resistance is insufficient leading to frequent replacements
Solution Approach 1:
The invention uses composite SiC material structure with multiple layers having different transmittance properties. This composite approach maintains the plasma resistance advantages of SiC while introducing functional differentiation through varying transmittance, preventing the component degradation that leads to frequent replacements.
3Productivity
If components are frequently replaced due to plasma exposure damage, then continuous production is maintained, but production costs increase due to waste
Solution Approach 1:
The multi-layer structure with different transmittances is designed in advance to distribute plasma exposure more evenly throughout the component. This preliminary structural design prevents localized degradation and extends component lifespan, reducing the frequency of replacements and associated waste.
Solution Approach 2:
The improved component durability allows for extended service life before replacement is necessary. The multi-layer structure maintains functional integrity longer, enabling recovery and reuse of components for extended periods, thereby reducing the rate at which components must be discarded and replaced.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents abnormal crystal growth, maintains the physical properties of the material, reduces industrial waste, and lowers production costs by allowing the reuse of components through regenerating units.
Implementation Method 1
a method for manufacturing a component for fabricating a semiconductor... in a chemical vapor deposition chamber... superposing a first layer containing SiC... superposing a second layer containing SiC
Implementation Method 2
a plasma processing technique used in a semiconductor manufacturing process is one of dry etching processes... ionizing the etching gas, and then accelerating the etching gas onto the wafer surface
Data Source
AI summary
Provided according to an embodiment of the present invention is a component for fabricating an SiC semiconductor, having a plurality of layers having different transmittances, the component comprising two or more superposed layers, wherein each of the superposed layers contains SiC and has a transmittance value different from that of another adjacent layer.