Multi-Layer Sidewall Profiling with Polymer-Assisted Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The semiconductor industry faces challenges in achieving desired sidewall profiles in multi-layer structures with existing deposition and lithography processes, which are time-consuming and costly, and limit the integration density of electronic components.
Innovation Solution
A method involving the deposition of multiple layers with tailored etch rates and angles, using a combination of etching processes and polymer formation to achieve specific sidewall profiles in a single deposition/lithography/etching process, allowing for continuous and discontinuous layer formations over multi-layer structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing deposition and lithography processes are used to achieve desired sidewall profiles, then manufacturing precision is improved, but productivity deteriorates due to time-consuming and costly multiple processes
Solution Approach 1:
The patent combines deposition and lithography processes into a single integrated process that forms multi-layer structures with tailored sidewall profiles. By merging these previously separate processes, the invention achieves the desired manufacturing precision while eliminating the time and cost associated with multiple sequential steps, directly resolving the productivity deterioration.
Solution Approach 2:
The single deposition/lithography/etching process performs multiple functions simultaneously: it deposits multiple layers with different etch rates, patterns the structure, and creates the desired sidewall profile. This multi-functional approach replaces what previously required separate specialized processes, improving productivity without sacrificing precision.
2Manufacturing precision
If existing deposition and lithography processes are used to achieve desired sidewall profiles, then manufacturing precision is improved, but device complexity increases due to multiple processes
Solution Approach 1:
By merging deposition, lithography, and etching into a single integrated process, the invention reduces the number of separate process modules, equipment setups, and process parameters that need to be managed. This consolidation simplifies the overall device complexity while maintaining the manufacturing precision needed for accurate sidewall profiles.
3Productivity
If minimum feature sizes are reduced to improve integration density, then productivity is improved, but manufacturing precision deteriorates due to additional problems arising at smaller scales
Solution Approach 1:
The invention utilizes parameter changes in the form of layers with different etch rates to achieve precise sidewall profiles at reduced feature sizes. By controlling the etch rates of different layers and using tailored etching processes, the method maintains manufacturing precision even as minimum feature sizes are reduced to improve integration density.
Solution Approach 2:
The patent applies local quality by creating layers with spatially varying etch rates and properties. Different layers have different materials and etch characteristics tailored to specific locations and functions, allowing precise control of sidewall profiles at reduced feature sizes. This local differentiation enables the manufacturing precision needed to overcome the additional problems that arise at smaller scales.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of multi-layer structures with tailored sidewall profiles in a single process, reducing manufacturing time and cost while improving integration density and output.
Implementation Method 1
forming a polymer material along sidewalls of the first mask and sidewalls of the plurality of layers
Implementation Method 2
performing a first etching process on the plurality of layers using the first mask as an etching mask, wherein after the first etching process the plurality of layers extend laterally beyond the first mask, and sidewalls of the plurality of layers are tapered
Data Source
AI summary
A method includes depositing a plurality of layers on a substrate, patterning a first mask overlying the plurality of layers, and performing a first etching process on the plurality of layers using the first mask. The method also includes forming a polymer material along sidewalls of the first mask and sidewalls of the plurality of layers, and removing the polymer material. The method also includes performing a second etching process on the plurality of layers using the remaining first mask, where after the second etching process terminates a combined sidewall profile of the plurality of layers comprises a first portion and a second portion, and a first angle of the first portion and a second angle of the second portion are different to each other.