Multi-Layer Sidewall Profiling Through Sequential Etching
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving desired sidewall profiles in multi-layer structures with existing deposition and lithography processes, which are time-consuming and costly, and are not easily adaptable for forming integrated Silicon-nanosystem devices with complex architectures.
Innovation Solution
A method involving the sequential deposition of layers with tailored material compositions and etching processes, including the use of multiple etching steps with specific etchants and polymer formation to achieve desired angled sidewalls, allowing for the formation of multi-layer structures with customized profiles in a single deposition/lithography/etching process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing deposition and lithography processes are used to achieve desired sidewall profiles, then manufacturing precision is improved, but productivity deteriorates due to time-consuming and costly multiple processes
Solution Approach 1:
The patent combines deposition and etching processes into a single integrated process. Multiple layers are deposited with tailored material compositions, then selectively etched in one continuous operation to form the desired sidewall profile, eliminating the need for separate deposition-lithography-etching cycles
Solution Approach 2:
The patent changes material composition parameters of deposited layers to control etching rates. By selecting materials with different etch selectivities, the process achieves different sidewall angles for different layers within a single etching step, maintaining precision while improving productivity
2Manufacturing precision
If existing processes are used for complex multi-layer structures, then manufacturing precision is improved, but device complexity increases making adaptation difficult
Solution Approach 1:
The patent applies local quality by giving different material compositions to different layers based on their required sidewall profiles. Each layer's material is specifically selected to achieve its target etching rate and sidewall angle, allowing complex structures to be formed through material property variation rather than process complexity
3Manufacturing precision
If multiple deposition and lithography processes are used, then manufacturing precision is improved, but loss of time increases
Solution Approach 1:
The patent performs preliminary action by depositing all required layers with appropriate material compositions before the etching step. This allows the subsequent single etching process to simultaneously define all sidewall profiles without requiring intermediate lithography steps between depositions
Solution Approach 2:
The patent merges multiple sequential processes into a single integrated deposition-etching operation, reducing the total number of process steps and eliminating idle time between operations while maintaining the precision needed for complex sidewall profiles
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the efficient formation of multi-layer structures with tailored sidewall profiles, reducing manufacturing time and costs, and facilitates the integration of these structures into advanced devices like Si-nanosystem devices with sandwich architectures.
Implementation Method 1
performing a first etching process on the plurality of layers using the first mask as an etching mask
Implementation Method 2
forming a polymer material along sidewalls of the first mask and sidewalls of the plurality of layers
Data Source
AI summary
A method includes depositing a plurality of layers on a substrate, patterning a first mask overlying the plurality of layers, and performing a first etching process on the plurality of layers using the first mask. The method also includes forming a polymer material along sidewalls of the first mask and sidewalls of the plurality of layers, and removing the polymer material. The method also includes performing a second etching process on the plurality of layers using the remaining first mask, where after the second etching process terminates a combined sidewall profile of the plurality of layers comprises a first portion and a second portion, and a first angle of the first portion and a second angle of the second portion are different to each other.