Multilayer Silicon Anodes for Stable High-Rate Lithium Storage

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Solution Overview

Problem

Conventional carbon-based anodes for lithium-ion batteries have limited storage capacity, and silicon anodes face manufacturing complexity and stability issues due to volume expansion, leading to pulverization and electrical disconnection.

Innovation Solution

An anode structure comprising a current collector with a metal oxide layer, a continuous porous lithium storage layer of silicon or germanium, and additional lithium storage layers, which are manufactured using chemical vapor deposition processes to enhance stability and capacity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If silicon is used as anode material to replace carbon-based anodes, then storage capacity is improved, but volume expansion causes pulverization and electrical disconnection

Engineering Contradiction:
Improvestorage capacityVSAvoidstructural stability
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The silicon anode is divided into discrete nanowires rather than using bulk silicon. This segmentation into smaller, isolated structures prevents crack propagation throughout the material and allows each nanowire to independently accommodate volume expansion without pulverizing the entire anode structure.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The silicon nanowires are grown directly on the current collector substrate, creating a nested structure where the silicon structures are integrated with the underlying substrate. This nesting provides mechanical support and maintains electrical connection even as the silicon expands and contracts during cycling.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Reliability

If nano- or micro-structured silicon is used to reduce pulverization, then stability is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvestructural stabilityVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The silicon nanowires are formed through a self-organizing vapor deposition process where silicon precursors naturally assemble into nanowire structures on the current collector. This self-service mechanism eliminates the need for complex top-down fabrication steps such as lithography, etching, and patterning, significantly simplifying manufacturing while producing the desired nanostructured morphology.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The mechanical processes of cutting, etching, and patterning silicon wafers are replaced with a chemical vapor deposition process that directly grows the desired nanowire structures. This substitution of mechanical fabrication with chemical self-assembly reduces manufacturing complexity, material waste, and production time.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Quantity of substance

If silicon nanowires are formed by PECVD followed by thermal CVD, then storage capacity is improved, but manufacturing reproducibility becomes difficult

Engineering Contradiction:
Improvestorage capacityVSAvoidreproducibility
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The complex two-step process involving PECVD followed by thermal CVD is replaced with a single simplified vapor deposition process. This extraction of unnecessary process steps eliminates the sensitivity to small perturbations in deposition conditions that plagues multi-step processes, thereby improving manufacturing reproducibility while maintaining the desired silicon nanowire structure and storage capacity.

Inventive Principle:
Principle #2Taking out (Extraction)

4Shape

If etching of silicon wafers is used to form nanostructures, then structured silicon is obtained, but manufacturing time increases and material is wasted

Engineering Contradiction:
Improvenanostructure formationVSAvoidmanufacturing efficiency
Core Design Contradiction:
ShapeVSProductivity

Solution Approach 1:

Instead of starting with bulk silicon wafers and removing material through time-consuming etching processes, the silicon nanowires are grown directly in their final nanostructured form through vapor deposition. This preliminary action of forming the desired structure during deposition eliminates subsequent machining steps, reduces manufacturing time, and prevents material waste associated with etching away excess silicon.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The vapor deposition process uses silicon precursors that are efficiently converted into the desired nanowire structure with minimal waste. Any unreacted precursor materials can be recovered and reused, whereas conventional etching processes permanently waste the removed silicon material. This approach significantly improves manufacturing efficiency and reduces material costs.

Inventive Principle:
Principle #34Discarding and recovering

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The anode structure provides improved stability at aggressive charging rates, higher areal charge capacity, and simplified, reproducible manufacturing, while maintaining physical durability.

Implementation Method 1

manufactured using chemical vapor deposition processes

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentUS12355072B2Multilayer anodes for lithium-based energy storage devices
Publication Date: 2025.07.08 GRAPHENIX DEVELOPMENT INC
  • US12355072B2 patent drawing
  • US12355072B2 patent drawing
  • US12355072B2 patent drawing

AI summary

An anode for an energy storage device may include a current collector. An anode may include a first lithium storage layer overlaying the current collector. An anode may include a first intermediate layer overlaying at least a portion of the first lithium storage layer. An anode may include a second lithium storage layer overlaying the first intermediate layer. The first lithium storage layer may be a continuous porous lithium storage layer including a total content of silicon, germanium, or a combination thereof, of at least 40 atomic %. The first intermediate layer may include a first sublayer in contact with an underlying lithium storage layer and a second sublayer overlaying the first sublayer and in contact with an overlying lithium storage layer, the first sublayer having different a chemical composition than the second sublayer.