Multilayer Sputtering Angle Control for Uniform Crystal Orientation
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Solution Overview
Problem
Current sputtering methods fail to consistently form material layers with uniform crystal orientation, leading to variations in crystal orientation and inefficient deposition rates, which require excessive resources and space.
Innovation Solution
A method utilizing a sputtering device where the incident angle of target material to the substrate is controlled to be about 9.14° or less, ensuring all crystals in the material layer have the same crystal orientation, and optimizing the sputtering process to achieve efficient deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional sputtering methods are used, then material layers can be deposited, but crystal orientation varies and deposition rates are inefficient
Solution Approach 1:
The patent changes the incident angle parameter from conventional values to about 9.14° or less, which fundamentally alters the sputtering process outcome. This parameter change simultaneously achieves uniform crystal orientation (improving manufacturing precision) and maintains efficient deposition rates (preserving productivity), resolving the technical contradiction between these two features.
2Productivity
If conventional sputtering methods are used, then deposition can occur, but excessive resources and space are required
Solution Approach 1:
By changing the incident angle parameter to about 9.14° or less, the patent achieves efficient deposition rates without requiring excessive space or resources. This parameter optimization allows the sputtering process to be more compact and resource-efficient while maintaining high productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures uniform crystal orientation in the material layer, enhances deposition rates, and reduces the need for excessive resources and space, while maintaining a cost-effective sputtering process environment.
Implementation Method 1
A general sputtering device generates an electric field by applying a bias voltage to an electrode disposed inside a chamber, generates plasma by providing an inert gas affected by the electric field to the inside of the chamber, and allows ions of the plasma, which is accelerated by the electric field, to collide with a target so as to sputter the target. Target materials of the sputtered target may be deposited on a substrate.
Data Source
AI summary
Provided is a method for manufacturing a multilayer structure. The method for manufacturing the multilayer structure includes providing a substrate in a chamber, providing a target in the chamber, and allowing a target material to be incident into the substrate so as to form a material layer. The target includes magnesium oxide or beryllium oxide. An incident angle of the target material to the substrate is about 9.14° or less.