Multilayer Wiring Insulation for Smooth Through-Hole Sidewalls

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Solution Overview

Problem

The presence of large inorganic filler particles in epoxy resin compositions used for semiconductor devices leads to unevenness on the side surfaces of through holes, which can deteriorate the shape and conductivity of the multilayer wiring.

Innovation Solution

A method involving the use of a metal protective film on the insulating layer surface, followed by dry desmear treatment, to remove exposed inorganic fillers while maintaining the integrity of the insulating layer, ensuring the through hole's smoothness and conductivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If the content of inorganic filler in the epoxy resin composition is increased to improve strength and suppress thermal expansion, then the strength is improved and thermal expansion is suppressed, but the possibility that inorganic filler particles with large particle diameter are present increases, leading to unevenness on the side surface of through holes

Engineering Contradiction:
Improvestrength of cured productVSAvoidshape of through hole
Core Design Contradiction:
StrengthVSManufacturing precision

Solution Approach 1:

The patent applies parameter changes by strictly controlling the particle size distribution of inorganic fillers, specifying that the maximum particle diameter should be 10 μm or less and the average particle diameter should be 5 μm or less. This parameter control resolves the contradiction by preventing large filler particles from causing through hole shape deterioration while still achieving the desired strength and thermal expansion properties through optimized filler composition.

Inventive Principle:
Principle #35Parameter changes

2Productivity

If laser processing is used to form through holes in the insulating layer, then through holes can be formed efficiently, but inorganic filler may be exposed on the side surface of the through hole, generating unevenness

Engineering Contradiction:
Improveefficiency of through hole formationVSAvoidsmoothness of through hole side surface
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies preliminary action by performing a desmear treatment after laser processing to remove exposed inorganic fillers from the through hole side surfaces. This preliminary cleanup step resolves the contradiction by maintaining the productivity benefits of laser processing while eliminating the unevenness caused by exposed fillers, ensuring smooth through hole surfaces.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively suppresses unevenness on the through hole surfaces, enhancing the reliability and conductivity of the multilayer wiring in semiconductor devices.

Implementation Method 1

subjecting, to a dry desmear treatment, the insulating layer in which the through hole is formed

Methodology Applied
Scientific EffectDry desmear treatment:

Data Source

PatentUS20250329548A1Method of manufacturing semiconductor device, and semiconductor device
Publication Date: 2025.10.23 RESONAC CORP
  • US20250329548A1 patent drawing
  • US20250329548A1 patent drawing
  • US20250329548A1 patent drawing

AI summary

A method of manufacturing a semiconductor device of the present disclosure is one that includes a multilayer wiring in which wiring layers and insulating layers are alternately layered, wherein wiring layers that are adjacent to each other, in a layered direction, via an insulating layer are electrically connected to each other via a conductor present in a through hole provided in the insulating layer, and the multilayer wiring is formed by: providing, on a base, an insulating layer having a metal protective film on a surface thereof and containing inorganic fillers having an average maximum particle length B of from 1 μm to 100 μm; forming a through hole in the insulating layer; and subjecting, to a dry desmear treatment, the insulating layer in which the through hole is formed.