Multi-Layered Dielectric Film for Microelectronic Devices
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The reduction in cell capacitance of semiconductor devices due to smaller unit cell areas leads to increased power dissipation, reduced integration levels, and difficulties in low-voltage driving, necessitating a method to enhance capacitance per unit area without the limitations of materials with low dielectric constants like silicon oxide and silicon nitride.
Innovation Solution
A multi-layered dielectric film structure comprising a single component oxide layer with composite oxide layers on either side, where the single component oxide layer has a higher dielectric constant than the composite layers, and is made of materials such as tantalum oxide, with composite components like AlxHfyOz, formed without a layered structure to increase capacitance and reduce leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the unit cell area is reduced to increase integration level, then the integration level is improved, but the cell capacitance is reduced
Solution Approach 1:
The patent changes the dielectric constant parameter of the capacitor dielectric layer from conventional materials (SiO2 with k=5, Si3N4 with k=10) to high-k dielectric materials (such as SrTiO3 with k>100, Pb(Zr,Ti)O3 with k>100). This parameter change enables achieving the required cell capacitance value even when the unit cell area is reduced, thus resolving the contradiction between integration level and cell capacitance.
Solution Approach 2:
The patent employs composite dielectric structures combining high-k dielectric materials with conventional dielectric materials. For example, a structure with a high-k dielectric layer (SrTiO3 or Pb(Zr,Ti)O3) combined with SiO2 or Si3N4 layers is used. This composite approach optimizes both capacitance density and electrical characteristics, enabling high integration while maintaining required cell capacitance.
2Ease of manufacture
If conventional dielectric materials (SiO2, Si3N4) are used, then the manufacturing process is simple, but the dielectric constant is low limiting capacitance increase
Solution Approach 1:
The patent changes the dielectric constant parameter from conventional values (k=5 for SiO2, k=10 for Si3N4) to high-k values (k>100 for materials like SrTiO3 and Pb(Zr,Ti)O3). This parameter change enables achieving required capacitance values without increasing device area, while the manufacturing processes for these high-k materials have been adapted to existing semiconductor fabrication techniques.
Solution Approach 2:
The patent replaces conventional dielectric materials with high-k dielectric materials, substituting materials with low dielectric constant (SiO2, Si3N4) with materials having high dielectric constant (SrTiO3, Pb(Zr,Ti)O3). This material substitution enables achieving the required capacitance density while maintaining compatibility with existing manufacturing processes through adapted deposition and processing techniques.
3Quantity of substance
If high-k dielectric materials are used to increase capacitance, then the capacitance per unit area is improved, but the leakage current may increase
Solution Approach 1:
The patent employs composite dielectric structures where high-k dielectric materials (SrTiO3, Pb(Zr,Ti)O3) are combined with conventional dielectric materials (SiO2, Si3N4). The high-k layer provides high capacitance density, while the conventional dielectric layers serve as barrier layers that suppress leakage current. This composite structure resolves the contradiction between achieving high capacitance per unit area and maintaining low leakage current.
Solution Approach 2:
The patent applies different material qualities to different regions of the dielectric structure. The high-k dielectric material is used in the region where high capacitance is needed, while conventional dielectric materials with lower leakage are used in regions where leakage suppression is critical. This local differentiation of material properties optimizes both capacitance and leakage characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The multi-layered dielectric film structure effectively increases capacitance per unit area, reduces power dissipation, and improves electrical characteristics, enabling higher integration and smaller chip sizes while maintaining reliability and leakage current performance.
Implementation Method 1
the dielectric property of the dielectric layer used in a capacitor can be evaluated by an equivalent oxide film thickness (known as a Toxeq value) and by a leakage current density. The equivalent oxide film thickness (Toxeq) is a value obtained by converting a thickness level of a dielectric film formed of a dielectric material other than a silicon oxide into an equivalent thickness level of a dielectric film made of a silicon oxide. As the Toxeq value is reduced, cell capacitance per unit area increases.
Data Source
AI summary
Multi-layered dielectric films which can improve the performance characteristics of a microelectronic device are provided as well as methods of manufacturing the same. The multi-layered dielectric film includes a single component oxide layer made of a single component oxide, and composite components oxide layers made of a composite components oxide including two or more different components formed along either side of the single component oxide layer without a layered structure.