Multilayered Filter Device Dimensional Separation
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Solution Overview
Problem
Existing multilayered band-pass filters face challenges in miniaturization due to interactions between conductor layers, which affect desired characteristics, and there is a need to reduce these interactions while maintaining performance.
Innovation Solution
A multilayered filter device is designed with a specific configuration where conductor layers constituting inductors of high-pass and low-pass filters, and a ground conductor layer are positioned at different locations in the stacking direction to minimize electromagnetic field interactions, allowing for miniaturization while achieving desired filter characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If conductor layers are stacked closely to miniaturize the filter device, then the device size is reduced, but electromagnetic field interactions between conductor layers increase causing performance degradation
Solution Approach 1:
The patent applies dimensional separation by distributing conductor layers across multiple stacking positions in the vertical dimension. Instead of placing all conductor layers at the same level, the invention utilizes different heights (first, second, and third stacking positions) to spatially separate interacting conductor layers, thereby reducing electromagnetic coupling while maintaining miniaturization benefits.
Solution Approach 2:
The patent segments the conductor layers into distinct groups positioned at different stacking heights. The first conductor layer (input), second conductor layer (output), and third conductor layer (ground) are separated vertically, creating independent electromagnetic zones that minimize unwanted interactions between signal paths and ground references.
2Reliability
If conductor layers are separated to reduce interactions, then filter characteristics improve, but the device size increases
Solution Approach 1:
The patent implements a nested layer structure where multiple conductor layers are embedded within a compact stack of dielectric layers. The conductor layers are nested at different vertical positions within the same horizontal footprint, achieving separation without increasing the overall device volume. This nested arrangement allows close spacing while maintaining electrical isolation through dielectric barriers.
3Ease of manufacture
If conductor layers are positioned at the same level for compact layout, then manufacturing is simplified, but electromagnetic interactions cause Q value degradation
Solution Approach 1:
The patent transitions from two-dimensional planar layout to three-dimensional stacked configuration. By moving conductor layers to different vertical levels (stacking positions), the invention maintains simple horizontal alignment for manufacturing while achieving electromagnetic isolation through vertical separation, thus preserving both manufacturability and Q value performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables the reduction of the filter device's size while maintaining or improving the Q value of the filters, preventing a drop in performance and allowing for efficient signal passing within a predetermined passband.
Implementation Method 1
If electromagnetic fields interact between the conductor layers, especially between the conductor layer constituting the inductor of the high-pass filter, the conductor layer constituting the inductor of the low-pass filter, and a conductor layer connected to the ground, desired characteristics can fail to be achieved.
Data Source
AI summary
A filter device includes a first port, a second port, a first high-pass filter, a first low-pass filter, and a stack. The first high-pass filter includes a first inductor. The first low-pass filter includes a first inductor. At least one second conductor layer constituting the first inductor of the first low-pass filter is located between at least one first conductor layer constituting the first inductor of the first high-pass filter and a ground conductor layer in a stacking direction.