Multi-Layered Gate Structure Mitigates GIDL in Semiconductor Devices
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Solution Overview
Problem
As semiconductor devices integrate and transistor sizes decrease, electrical characteristics deteriorate due to phenomena like Gate Induced Drain Leakage (GIDL), which affects performance and refresh characteristics.
Innovation Solution
A semiconductor device with a multi-layered structure is formed between the gate and junction region, incorporating a gate insulation film, nitride films, and oxide films to reduce GIDL and improve pause refresh characteristics by managing charge distribution and threshold voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If transistor size is reduced to increase integration, then integration density is improved, but electrical characteristics deteriorate due to GIDL
Solution Approach 1:
A multi-layered structure comprising a first nitride film, a first oxide film, and a second nitride film is introduced between the gate and the junction region. This intermediary structure mitigates Gate Induced Drain Leakage (GIDL) by controlling charge distribution and electric field characteristics, thereby maintaining electrical characteristics despite transistor size reduction for increased integration density.
Solution Approach 2:
The patent employs a composite multi-layered structure with alternating nitride and oxide films. Each layer contributes different properties: nitride films provide charge storage capability while oxide films provide insulation. This composite structure effectively suppresses GIDL and improves pause refresh characteristics, enabling high integration without sacrificing electrical performance.
2Reliability
If multi-layered structure is formed between gate and junction region, then GIDL is reduced and refresh characteristics are improved, but device complexity increases
Solution Approach 1:
The gate insulation film is segmented into multiple functional layers: a first nitride film layer, a first oxide film layer, and a second nitride film layer. Each segment performs a specific function in charge management and electric field control. This segmentation enables effective GIDL reduction and improved refresh characteristics while maintaining a systematic and manufacturable structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The multi-layered structure effectively mitigates GIDL and enhances the operating speed and refresh characteristics of semiconductor devices, improving their overall performance.
Implementation Method 1
incorporating a gate insulation film, nitride films, and oxide films to reduce GIDL and improve pause refresh characteristics by managing charge distribution and threshold voltage
Implementation Method 2
managing charge distribution and threshold voltage
Data Source
AI summary
A semiconductor device includes a semiconductor substrate including a trench, a gate insulation film located over a bottom and sidewall of the trench, a first gate formed over the gate insulation film and in a lower portion of the trench, a second gate formed over the first gate and in an upper portion of the trench, a multi-layered structure provided between the gate insulation film and the second gate.