Multi-Level Gas Injector Assembly for Uniform ALD/CVD Mixing
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Solution Overview
Problem
Current gas injectors for semiconductor manufacturing processing chambers fail to ensure efficient gas mixing at a wide range of process pressures for atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes, leading to non-uniform deposition and recognizable entry port signatures in the deposited films.
Innovation Solution
The gas insert design includes multiple gas injection levels with rotational directions, featuring a bottom level with opposite flow direction to create turbulence and act as a gas curtain, enhancing mixing efficiency and uniformity by breaking laminarity and increasing residence time of gases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple tangential and gas entry ports are used to create a vortex inside the cap insert, then gas delivery is improved, but entry port signature becomes recognizable in the deposited films
Solution Approach 1:
The gas delivery system is segmented into multiple injection levels (first, second, and third levels) with multiple ports at each level. This segmentation allows different gas streams to be introduced at different heights and angles, creating overlapping vortex patterns that mix more uniformly and prevent any single entry port signature from dominating the deposited film.
Solution Approach 2:
The invention adds the vertical dimension to gas injection by implementing ports at three different levels within the cap insert. This multi-level vertical arrangement creates vortex flows at different heights that interact and mix throughout the deposition chamber, eliminating the two-dimensional entry port signature problem while maintaining efficient gas delivery.
2Manufacturing precision
If gas mixing is optimized for ALD process, then deposition uniformity is improved, but gas mixing performance deteriorates for CVD co-flow process
Solution Approach 1:
The cap insert design with three levels of ports and vortex creation capability serves multiple functions: it provides effective gas mixing for ALD processes while simultaneously accommodating CVD co-flow requirements. The multiple ports at different levels can be configured to work with different process gases and flow conditions, making the system universally applicable to both ALD and CVD processes.
Solution Approach 2:
The system dynamically adapts to different process requirements through its multi-level port configuration. By adjusting gas flow rates and compositions at each level, the system can optimize vortex formation and gas mixing characteristics for either ALD or CVD processes, providing dynamic adaptability across different semiconductor deposition technologies.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides improved gas mixing and uniformity across various process pressures, reducing non-uniformity in deposited films and enhancing the reliability of semiconductor manufacturing processes.
Implementation Method 1
Each of the gas flows are directed in a rotational direction within the inner channel. The gas injection level closest to an outlet end of the gas insert directs a gas flow in an opposite rotational direction than the other gas injection levels
Implementation Method 2
Multiple tangential and gas entry ports are used to create a vortex inside the cap insert during gas delivery
Implementation Method 3
The gas injection level closest to an outlet end of the gas insert directs a gas flow in an opposite rotational direction than the other gas injection levels
Data Source
AI summary
Gas inserts for semiconductor manufacturing processing chambers with a plurality of injection levels are described. Each of the gas injection levels provides a gas flow to an inner channel within the gas insert. Each of the gas flows are directed in a rotational direction within the inner channel. The gas injection level closest to the outlet end of the gas insert directs a gas flow in the opposite rotational direction to the other gas injection levels. Processing chambers, gas distribution assemblies and methods using the gas inserts are also described.