Multi-Metallic EUV Photoresist Composition for Lithography
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Solution Overview
Problem
Current chemically amplified photoresists face limitations such as poor photon absorption in thin films, moderate etch selectivity, and limited gains in resolution, making them inadequate for next-generation semiconductor lithography requirements, particularly in extreme ultraviolet (EUV) lithography.
Innovation Solution
The development of non-chemically amplified, multi-metallic resist compositions that incorporate multiple metal atoms, such as antimony, to enhance EUV light absorption and etch selectivity, utilizing metal complexes that attach through ionic bonds or ligands, and generate secondary electrons for improved cross-linking reactions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If chemically amplified photoresist (CAR) compositions are used to increase resist sensitivity to exposing light source, then resist sensitivity is improved, but photon absorption in thin films remains poor and etch selectivity is moderate
Solution Approach 1:
The patent employs composite materials by incorporating metal atoms (such as antimony, ruthenium, or gadolinium) into the photoresist composition to form a multi-component system. These metal atoms serve as photon absorption centers that enhance EUV light absorption in thin films while maintaining or improving resist sensitivity, thereby resolving the contradiction between sensitivity and photon absorption efficiency
Solution Approach 2:
The patent changes the chemical composition parameters of the photoresist by introducing specific metal atoms with appropriate atomic numbers and absorption characteristics. This parameter modification enables the resist to achieve both high sensitivity and improved photon absorption efficiency in the EUV range without relying solely on chemically amplified systems
2Measurement precision
If chemically amplified photoresist (CAR) compositions are used to increase resist sensitivity to exposing light source, then resist sensitivity is improved, but resolution gains are limited
Solution Approach 1:
By creating a composite photoresist system containing metal atoms embedded in the resist matrix, the patent achieves enhanced resolution through improved photon absorption and localized energy deposition. The metal atoms act as efficient photon absorbers that generate secondary electrons with sufficient energy to initiate cross-linking reactions, thereby improving resolution beyond what conventional CAR systems can achieve
Solution Approach 2:
The patent substitutes the chemically amplified mechanism with a direct photo-induced cross-linking mechanism mediated by metal atoms. Instead of relying on chemical amplification cascades, the metal atoms directly absorb photons and generate secondary electrons that trigger cross-linking, providing a more efficient pathway for achieving high resolution
3Ease of manufacture
If conventional photoresist compositions are used, then manufacturing process is simpler, but etch selectivity is moderate
Solution Approach 1:
The patent modifies the compositional parameters of the photoresist by incorporating metal atoms that provide inherent etch selectivity through their unique chemical properties and cross-linking behavior. This parameter change enables the resist to achieve moderate to good etch selectivity while maintaining relative process simplicity, as the metal atoms integrate into existing resist formulation approaches
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These multi-metallic resist compositions demonstrate improved sensitivity and etch selectivity, enabling more efficient use of EUV lithography sources and overcoming the limitations of traditional chemically amplified resists, thus meeting the demands of advanced semiconductor manufacturing.
Implementation Method 1
incorporate multiple metal atoms, such as antimony, to enhance EUV light absorption
Implementation Method 2
generate secondary electrons for improved cross-linking reactions
Implementation Method 3
generate secondary electrons for improved cross-linking reactions
Data Source
AI summary
Provided is a material composition and method for that includes providing a substrate and forming a resist layer over the substrate. In various embodiments, the resist layer includes a multi-metal complex including an extreme ultraviolet (EUV) absorption element and a bridging element. By way of example, the EUV absorption element includes a first metal type and the bridging element includes a second metal type. In some embodiments, an exposure process is performed to the resist layer. After performing the exposure process, the exposed resist layer is developed to form a patterned resist layer.